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Volumn 62, Issue , 2012, Pages 216-220
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Theoretical study of the formation of a GaAs bilayer on Si(1 1 1)
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Author keywords
2D Nanostructure; Density functional theory; Gallium arsenide; Silicon
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Indexed keywords
BI-LAYER;
ELECTRON-ION INTERACTIONS;
EXCHANGE CORRELATION ENERGY;
FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS;
GAAS;
GENERALIZED GRADIENT APPROXIMATIONS;
MONOLAYER COVERAGE;
ONE-DIMENSIONAL ATOMIC CHAINS;
PSEUDOPOTENTIALS;
SI (1 1 1);
SI LAYER;
THEORETICAL STUDY;
ADSORPTION;
ATOMS;
DENSITY FUNCTIONAL THEORY;
GALLIUM ARSENIDE;
ION EXCHANGE;
MONOLAYERS;
SEMICONDUCTING GALLIUM;
SILICON;
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EID: 84862303655
PISSN: 09270256
EISSN: None
Source Type: Journal
DOI: 10.1016/j.commatsci.2012.05.043 Document Type: Article |
Times cited : (1)
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References (18)
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