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Volumn 62, Issue , 2012, Pages 216-220

Theoretical study of the formation of a GaAs bilayer on Si(1 1 1)

Author keywords

2D Nanostructure; Density functional theory; Gallium arsenide; Silicon

Indexed keywords

BI-LAYER; ELECTRON-ION INTERACTIONS; EXCHANGE CORRELATION ENERGY; FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS; GAAS; GENERALIZED GRADIENT APPROXIMATIONS; MONOLAYER COVERAGE; ONE-DIMENSIONAL ATOMIC CHAINS; PSEUDOPOTENTIALS; SI (1 1 1); SI LAYER; THEORETICAL STUDY;

EID: 84862303655     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2012.05.043     Document Type: Article
Times cited : (1)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.