Strong tuning of rashba spin-orbit interaction in single InAs nanowires

Nano Letters

Volumn 12, Issue 6, 2012, Pages 3263-3267

  Liang, Dong ^a   Gao, Xuan P A ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

1D weak anti localization; indium arsenide; nanowire; Rashba effect; spin orbit coupling

Indexed keywords

1D WEAK ANTI-LOCALIZATION; DOUBLE GATE; ELECTRIC-FIELD CONTROL; GATE BIAS; GATE VOLTAGES; INAS; ORDERS OF MAGNITUDE; RASHBA EFFECTS; RASHBA SPIN ORBIT INTERACTION; SPIN ORBIT INTERACTIONS; SPIN PRECESSION; SPIN RELAXATION TIME; SPIN-ORBIT COUPLINGS; SPINTRONIC DEVICE; STRONG ELECTRIC FIELDS; SURROUNDING-GATE;

ELECTRIC FIELDS; INDIUM ARSENIDE; MAGNETIC FIELDS; MAGNETOELECTRONICS; SOLID ELECTROLYTES;

NANOWIRES;

INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; SPIN LABELING; ULTRASTRUCTURE;

ARSENICALS; COMPUTER SIMULATION; INDIUM; MODELS, CHEMICAL; NANOSTRUCTURES; SPIN LABELS;

EID: 84862292751     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl301325h     Document Type: Article

References (35)

1. Dayeh, S. A.; Soci, C.; Bao, X. Y.; Wang, D. L. Nano Today 2009, 4, 347-358
2. Wernersson, L. E.; Thelander, C.; Lind, E.; Samuelson, L. Proc. IEEE 2010, 98, 2047-2060
3. Bryllert, T.; Wernersson, L. E.; Froberg, L. E.; Samuelson, L. IEEE Elec. Dev. Lett. 2006, 27, 323-325
4. Dayeh, S. A.; Aplin, D. P. R.; Zhou, X. T.; Yu, P. K.L.; Yu, E. T.; Wang, D. L. Small 2007, 3, 326-332
5. Jiang, X.; Xiong, Q.; Nam, S.; Qian, F.; Li, Y.; Lieber, C. M. Nano Lett. 2007, 7, 3214-3218
6. Ford, A. C.; Ho, J. C.; Chueh, Y. L.; Tseng, Y. C.; Fan, Z. Y.; Guo, J.; Bokor, J.; Javey, A. Nano Lett. 2009, 1, 360-365
7. Ko, H. Nature 2010, 468, 286-289
8. Schroer, M. D.; Petta, J. R. Nano Lett. 2010, 10, 1618-1622
9. Sakr, M. R.; Gao, X. P. A. Appl. Phys. Lett. 2008, 93, 203503
10. Du, J.; Liang, D.; Tang, H.; Gao, X. P.A. Nano Lett. 2009, 9, 4348-4351
11. Datta, S.; Das, B. Appl. Phys. Lett. 1990, 56, 665
12. Zutic, I.; Fabian, J.; Das Sarma, S. Rev. Mod. Phys. 2004, 76, 323-410
13. Awschalom, D. D.; Loss, D.; Samarth, N. Semiconductor Spintronics and Quantum Computation; Springer: New York, 2002.
14. Nitta, J.; Akazaki, T.; Takayanagi, H.; Enoki, T. Phys. Rev. Lett. 1997, 78, 1335
15. Grundler, D. Phys. Rev. Lett. 2000, 84, 6074
16. Koga, T.; Nitta, J.; Akazaki, T.; Takayanagi, H. Phys. Rev. Lett. 2002, 89, 046801
17. Miller, J. B. Phys. Rev. Lett. 2003, 90, 076807
18. Koo, H. C.; Kwon, J. H.; Eom, J.; Chang, J.; Han, S. H.; Johnson, M. Science 2009, 325, 1515-1518
19. SchäPers, Th.; Knobbe, J.; Guzenko, V. A. Phys. Rev. B 2004, 69, 235323
20. Quay, C. H. L.; Hughes, T. L.; Sulpizio, J. A.; Pfeiffer, L. N.; Baldwin, K. W.; West, K. W.; Goldhaber-Gordon, D.; de Picciotto, R. Nat. Phys. 2010, 6, 336-339
21. Hansen, A. E.; Björk, M. T.; Fasth, C.; Thelander, C.; Samuelson, L. Phys. Rev. B 2005, 71, 205328
22. Dhara, S. Phys. Rev. B 2009, 79, 121311
23. Estévez Hernández, S. Phys. Rev. B 2010, 82, 235303
24. Petersen, G.; Estévez Hernández, S.; Calarco, R.; Demarina, N.; SchäPers, Th. Phys. Rev. B 2009, 80, 125321
25. Hao, X. J. Nano Lett. 2010, 10, 2956-2960
26. Lin, P. A.; Liang, D.; Reeves, S.; Gao, X. P. A.; Sankaran, R. M. Nano Lett. 2012, 12, 315-320
27. Weitz, R. T.; Allen, M. T.; Feldman, B. E.; Martin, J.; Yacoby, A. Science 2010, 330, 812-816
28. Liang, D.; Sakr, M. R.; Gao, X. P. A. Nano Lett. 2009, 9, 1709-1712
29. Liang, D.; Du, J.; Gao, X. P. A. Phys. Rev. B 2010, 81, 153304
30. Lu, C.; Fu, Q.; Huang, S.; Liu, J. Nano Lett. 2004, 4, 623-627
31. Siddons, G. P.; Merchin, D.; Back, J. H.; Kyeong, J.; Shim, M. Nano Lett. 2004, 4, 927-931
32. Mak, K. F; Lui, C. H.; Shan, J.; Heinz, T. F. Phys. Rev. Lett. 2009, 102, 256405
33. Knap, W. Phys. Rev. B 1996, 53, 3912-3924
34. Gao, X. P. A.; Zheng, G. F.; Lieber, C. M. Nano Lett. 2010, 10, 547-552
35. Storm, K.; Nylund, G.; Samuelson, L.; Micolich, A. P. Nano Lett. 2012, 12, 1-6