Electronic level scheme in boron- and phosphorus-doped silicon nanowires

Nano Letters

Volumn 12, Issue 6, 2012, Pages 3012-3017

  Sato, Keisuke ^a   Castaldini, Antonio ^a   Fukata, Naoki ^b   Cavallini, Anna ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

deep levels; E center; gold incorporation; shallow levels; Silicon nanowires

Indexed keywords

BULK SILICON; DEEP LEVEL; DIFFUSION MODELING; DONOR LEVELS; DOPING IMPURITIES; E-CENTER; ELECTRICAL CHARACTERISTIC; ELECTRONIC LEVELS; IMPURITIES IN; PHOSPHORUS-DOPED; SHALLOW LEVELS; SILICON NANOWIRES; TECHNOLOGICAL ASPECTS;

GOLD; GOLD COMPOUNDS; HYDROGEN; IMPURITIES; NANOWIRES;

PHOSPHORUS;

BORON; NANOMATERIAL; PHOSPHORUS; SILICON;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; MATERIALS TESTING; ULTRASTRUCTURE;

BORON; ELECTRON TRANSPORT; MATERIALS TESTING; NANOSTRUCTURES; PHOSPHORUS; SILICON;

EID: 84862278332     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300802x     Document Type: Article

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