Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

Optical Materials Express

Volumn 1, Issue 4, 2011, Pages 643-651

  Ou, Haiyan ^a   Ou, Yiyu ^a   Liu, Chuan ^a   Berg, Rolf W ^a   Rottwitt, Karsten ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIFFERENT SIZES; EMISSION PEAKS; GE NANOCRYSTALS; GERMANIUM NANOCRYSTALS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; PROPER EXCITATIONS; QUANTUM CONFINEMENT EFFECTS; SOLID STATE MEMORIES; STRAIN EFFECT; WIDE AREA;

NANOCRYSTALS; NONLINEAR OPTICS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 84862148137     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.1.000643     Document Type: Article

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