Scalable electrical properties of Axial GaAs nanowire pn-diodes

Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 809-812

  Gutsche, C ^a   Lysov, A ^a   Regolin, I ^a   Munstermann B ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Electrical properties; Gallium arsenide; Ideality factor; Nanowires; Pn diodes

Indexed keywords

CRITICAL DIAMETER; DEVICE FUNCTIONALITY; ELECTRICAL MEASUREMENT; FORWARD CURRENTS; GAAS; IDEALITY FACTORS; JUNCTION AREA; METAL-ORGANIC VAPOR PHASE EPITAXY; PN-DIODES; RECTIFICATION RATIO; SERIES RESISTANCES; SINGLE NANOWIRES; SURFACE DEPLETION;

DIODES; ELECTRIC RESISTANCE; GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTING GALLIUM; VAPORS;

ELECTRIC PROPERTIES;

EID: 84862146285     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1824-5     Document Type: Article

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