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Volumn , Issue , 2012, Pages 50-54

A diaphragm based piezoelectric AlN film quality test structure

Author keywords

Aluminum nitride; Di aphragm; MEMS; Piezoelectrics

Indexed keywords

ALN; ALN FILMS; BULK-MICROMACHINED; CMOS PROCESSING; DEPOSITION PROCESS; MATERIAL CHARACTERIZATIONS; PIEZOELECTRIC PROPERTY; PIEZOELECTRICS; TEST STRUCTURE; UNDERLYING LAYERS;

EID: 84862062962     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMTS.2012.6190612     Document Type: Conference Paper
Times cited : (17)

References (5)
  • 1
  • 2
    • 34147097056 scopus 로고    scopus 로고
    • Combined assessment of piezoelectric AlN films using X-ray diffraction, infrared absorption and atomic force microscopy
    • DOI 10.1016/j.diamond.2006.11.065, PII S0925963506004651
    • J. Olivares, S. Gonzalez, M. Clement, A. Sanz, L. Vergara, J. Sangrador, E. Iborra, "Combined assessment of piezoelectric AIN films using X-ray diffraction, infrared absorption and atomic force microscopy," Diamond & Related Materials, 2007, (16) :1421-1424. (Pubitemid 46553849)
    • (2007) Diamond and Related Materials , vol.16 , Issue.4-7 SPEC. ISS. , pp. 1421-1424
    • Olivares, J.1    Gonzalez-Castilla, S.2    Clement, M.3    Sanz-Hervas, A.4    Vergara, L.5    Sangrador, J.6    Iborra, E.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.