PNP PIN bipolar phototransistors for high-speed applications built in a 180 nm CMOS process

Solid-State Electronics

Volumn 74, Issue , 2012, Pages 49-57

  Kostov, P ^a   Gaberl, W ^a   Hofbauer, M ^a   Zimmermann, H ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Integrated phototransistor; Light detector; Photodetector; PIN; PNP; Silicon

Indexed keywords

AC MEASUREMENTS; BASE-EMITTER CAPACITANCE; CMOS PROCESSS; COLLECTOR-EMITTER VOLTAGE; ELECTRIC FIELD STRENGTH; EMITTER AREA; HIGH-SPEED APPLICATIONS; LAYER STRUCTURES; OPTIMIZED DESIGNS; PIN; PNP; SPACE CHARGE REGIONS;

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; EPITAXIAL GROWTH; OPTIMIZATION; PHOTODETECTORS; SILICON; SILICON WAFERS;

PHOTOTRANSISTORS;

EID: 84861904270     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.04.011     Document Type: Conference Paper

References (24)

1. H. Zimmermann Integrated silicon optoelectronics 2nd ed. 2010 Springer-Verlag Berlin, Heidelberg
2. J. Geist, and E.F. Zalewski The quantum yield of silicon in the visible Appl Phys Lett 35 7 1979 503 506
3. O. Christensen Quantum efficiency of the internal photoelectric effect in silicon and germanium J Appl Phys 47 1976 689 695
4. D.K. Schroder, R.N. Thomas, and J.C. Swartz Free carrier absorption in silicon IEEE J Solid-State Circuits 13 1 1978 180 187
5. Swoboda R, Zimmermann H. 11Gb/s monolithically integrated silicon optical receiver for 850 nm wavelength. In: IEEE international solid-state circuit conference, Digest of Technical Papers ISSCC, vol. 49; 2006. p. 240-1.
6. J.D. Schaub, R. Li, S.M. Csutak, and J.C. Campbell High-speed monolithic silicon photoreceivers on high resistivity and SOI substrates IEEE J Lightwave Technol 19 2 2001 272 278
7. B. Ciftcioglu, L. Zhang, J. Zhang, J.R. Marciante, J. Zuegel, and R. Sobolewski Integrated silicon PIN photodiodes using deep N-well in a standard 0.18-μm CMOS technology IEEE J Lightwave Technol 27 15 2009 3303 3313
8. M. Davidovic, G. Zach, K. Schneider-Hornstein, and H. Zimmermann TOF range finding sensor in 90 nm CMOS capable of suppressing 180 klx ambient light IEEE Sensors 2010 2413 2416
9. S. Cova, M. Ghioni, A. Lacaita, C. Samori, and F. Zappa Avalanche photodiodes and quenching circuits for single-photon detection Appl Opt 35 12 1996 1956 1976
10. Pancheri L, Stoppa D. Low-noise single photon avalanche diodes in 0.15 μm CMOS technology. In: European solid-state device research conference, Proceedings of ESSDERC; 2011. p. 179-82.
11. T. Yin, A.M. Pappu, and A.B. Apsel Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS IEEE Photonics Technol Lett 18 1 2006 55 57
12. K.S. Lai, J.C. Huang, and K.Y.J. Hsu High-responsivity photodetector in standard SiGe BiCMOS technology IEEE Electron Device Lett 28 9 2007 800 802
13. P. Kostov, K. Schneider-Hornstein, and H. Zimmermann Phototransistors for CMOS optoelectronic integrated circuits Sens Actuators, A 172 2011 140 147
14. P. Kostov, W. Gaberl, and H. Zimmermann Visible and NIR integrated phototransistors in CMOS technology Solid-State Electron 65-66 2011 211 218
15. A. Hu, and V.P. Chodavarapu CMOS optoelectronic lock-in amplifier with integrated phototransistor array IEEE Trans Biomed Circuits Syst 4 5 2010 274 280
16. K. Kieschnick, H. Zimmermann, and P. Seegebrecht Silicon-based optical receivers in BiCMOS technology for advanced optoelectronic integrated circuits Mater Sci Semiconduct Process 3 2000 395 398
17. A.C. Carusone, H. Yasotharan, and T. Kao CMOS technology scaling considerations for multi-gbps optical receivers with integrated photodetectors IEEE J Solid-State Circuits 46 8 2011 1832 1842
18. Kostov P, Gaberl W, Zimmermann H. High-speed PNP PIN phototransistors in a 0.18 μm CMOS process, IEEE ESSDERC 2011. pp. 187-90.
19. R.W. Sandage, and J.A. Connelly A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process IEEE IEDM 1995 171 174
20. W. Zhang, M. Chan, and P.K. Ko A novel high-gain CMOS image sensor using floating N-well/gate tied PMOSFET IEEE IEDM 1998 1023 1025
21. G. Winstel, and C. Weyrich Optoelektronik II 1986 Springer Berlin, Heidelberg p. 97
22. S.M. Sze, and K.K. Ng Physics of semiconductor devices 3rd ed. 2006 Wiley New York
23. C.T. Kirk A theory of transistor cutoff frequency (fT) falloff at high current densities IRE Trans Electron Devices 1962 164 174
24. R.J. Whittier, and D.A. Tremere Current gain and cutoff frequency falloff at high currents IEEE Trans Electron Devices 16 1 1969 39 57