Atomistic simulations of helium behavior in tungsten crystals

Journal of Nuclear Materials

Volumn 427, Issue 1-3, 2012, Pages 290-296

  Wang, Jun ^a   Zhou, Yulu ^a   Li, Min ^a   Hou, Qing ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ARRHENIUS; ATOMISTIC SIMULATIONS; DEFECT PROPERTY; DIFFUSION BEHAVIOR; DIFFUSION DATA; DIFFUSION MECHANISMS; ELEVATED TEMPERATURE; EMPIRICAL POTENTIALS; EXPERIMENTAL DATA; MIGRATION ENERGY; PAIR POTENTIAL; TUNGSTEN CRYSTAL;

CALCULATIONS; DIFFUSION; TUNGSTEN;

HELIUM;

EID: 84861857506     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2012.05.020     Document Type: Article

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