Highly formaldehyde-sensitive, transition-metal doped ZnO nanorods prepared by plasma-enhanced chemical vapor deposition

Sensors and Actuators, B: Chemical

Volumn 169, Issue , 2012, Pages 74-80

  Hu, Peng ^a   Han, Ning ^a,b   Zhang, Dangwen ^a,c   Ho, Johnny C ^b   Chen, Yunfa ^a  

^a INSTITUTE OF PROCESS ENGINEERING   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Formaldehyde gas sensors; Plasma enhanced chemical vapor deposition; Transition metal dopants; ZnO nanorods

Indexed keywords

CADMIUM COMPOUNDS; CHEMICAL SENSORS; CRYSTAL DEFECTS; DOPING (ADDITIVES); FORMALDEHYDE; GAS DETECTORS; GAS SENSING ELECTRODES; II-VI SEMICONDUCTORS; MOS DEVICES; NANORODS; OXIDE SEMICONDUCTORS; PLASMA CVD; PRECIPITATION (CHEMICAL); TRANSITION METALS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CRYSTALLIZATION PROCESS; GAS SENSITIVITY; LOW CONCENTRATIONS; METAL OXIDE SEMICONDUCTOR GAS SENSORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); TRANSITION METAL DOPANTS; ZNO NANOMATERIALS; ZNO NANOROD;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 84861845312     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.03.035     Document Type: Article

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