Factors for the polarization lifetime in metal-ferroelectric-insulator- semiconductor capacitors

Solid-State Electronics

Volumn 73, Issue , 2012, Pages 84-88

  Xiao, Y G ^a   Xiong, Y ^a   Tang, M H ^a   Li, J C ^b   Gu, X C ^b   Cheng, C P ^a   Jiang, B ^a   Tang, Z H ^a   Lv, X S ^a   Cai, H Q ^a   He, J ^c  

^a XIANGTAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^c Geological Survey of Canada Sidney   (Canada)

Author keywords

Depolarization field; Ferroelectric thin film; MFIS; Polarization retention

Indexed keywords

DEPOLARIZATION FIELDS; FERROELECTRIC FIELD EFFECT TRANSISTORS; INTERFACE LAYER; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; MFIS; MFIS-FET; NON-VOLATILE MEMORIES; POLARIZATION RELAXATION; RETENTION MODELS; RETENTION PROPERTIES; RETENTION TIME; SEMICONDUCTOR CAPACITORS;

ELECTROLYTIC CAPACITORS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; POLARIZATION;

DEPOLARIZATION;

EID: 84861810056     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.04.026     Document Type: Article

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