The broadband NIR emission properties of Bi doped La 2O 3-Al 2O 3-SiO 2 glass

Journal of Luminescence

Volumn 132, Issue 10, 2012, Pages 2634-2638

  Qian, Min ^a,b   Yu, Chunlei ^a   Cheng, Jimeng ^a   Li, Kefeng ^a   Hu, Lili ^a  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Bismuth; La 2O 3 Al 2O 3 SiO 2 glass; Near infrared luminescence

Indexed keywords

BI-DOPED; BROADBAND EMISSION; DOPING LEVELS; EMISSION BANDS; EMISSION PEAKS; EMISSION SPECTRUMS; ENERGY MATCHING; EXCITATION WAVELENGTH; FLUORESCENT LIFETIME; NEAR INFRARED LUMINESCENCE; NIR EMISSION; SPECTROSCOPIC PROPERTY; VALENCE STATE;

ALUMINUM; BISMUTH; EMISSION SPECTROSCOPY; INFRARED DEVICES; LANTHANUM OXIDES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

GLASS;

EID: 84861799705     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.05.003     Document Type: Article

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