Origin of ferromagnetism and oxygen-vacancy ordering induced cross-controlled magnetoelectric effects at room temperature

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Wei, X K ^a   Zou, T ^a   Wang, F ^a   Zhang, Q H ^a   Sun, Y ^a   Gu, L ^a,b   Hirata, A ^b   Chen, M W ^b   Yao, Y ^a   Jin, C Q ^a   Yu, R C ^a  

^a INSTITUTE OF PHYSICS   (China)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AC ELECTRIC FIELD; AC MAGNETIC FIELDS; BULK CERAMICS; CENTROSYMMETRIC MATRIX; DILUTE MAGNETIC OXIDES; FERRO-MAGNETIC INTERACTIONS; FREQUENCY DEPENDENCE; INDUCED VOLTAGES; INSULATING SYSTEM; INTRINSIC FERROMAGNETISM; MAGNETOELECTRIC COUPLINGS; MULTIFERROIC MATERIALS; ROOM TEMPERATURE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TRAPPED ELECTRONS; VACANCY ORDERING;

IMAGING TECHNIQUES; MAGNETIC FIELDS; MAGNETOELECTRIC EFFECTS; MAGNETOSTRICTIVE DEVICES; OXYGEN VACANCIES; PARAMAGNETISM; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

FERROMAGNETISM;

EID: 84861755381     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3696979     Document Type: Conference Paper

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