Progress toward a solid-state ionic field effect transistor

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Deml, Ann M ^a   Bunge, Annette L ^a   Reznikov, Michael A ^b   Kolessov, Alex ^b   O'Hayre, Ryan P ^a  

^a Department of Geology and Geological Engineering   (United States)

^b PHYSICAL OPTICS CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION CHANNEL; CURRENT LEAKAGE; DEVICE PERFORMANCE; DOUBLE LAYERS; ELECTRIC DOUBLE LAYER; EXPERIMENTAL STUDIES; EXTERNAL ELECTRIC FIELD; GATE ELECTRODES; ION-CONDUCTING; IONIC TRANSPORTS; MEMBRANE RESISTANCE; MEMBRANE THICKNESS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NAFION MEMBRANE; PROTON-CONDUCTING POLYMERS; REPRODUCIBILITIES; SPACE CHARGE LAYERS; THEORETICAL FOUNDATIONS;

CONDUCTING POLYMERS; FIELD EFFECT TRANSISTORS;

ELECTRIC FIELD EFFECTS;

EID: 84861740747     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3702442     Document Type: Conference Paper

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