SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

Magnetic tunnel junction design margin exploration for self-reference sensing scheme

(3) Sun, Z a Li, H a Wang, X b

a POLYTECHNIC UNIVERSITY (United States)

b SEAGATE TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNS; DESIGN MATRIX; DESIGN REQUIREMENTS; DEVICE PROPERTIES; DEVICE RELIABILITY; FAST SENSING; MAGNETIC TUNNEL JUNCTION; NON DESTRUCTIVE; NOVEL SENSING SCHEMES; PARALLEL RESISTANCE; PROCESS VARIATION; SELF-REFERENCES; SENSING SCHEMES; SPIN TORQUE; VOLTAGE-DEPENDENT CONDUCTANCE;

DESIGN; TUNNELS;

MAGNETIC DEVICES;

EID: 84861736215 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3679647 Document Type: Conference Paper

Times cited : (12)

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