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Volumn 116, Issue 19, 2012, Pages 10490-10497
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Preparation and photoelectrochemical properties of p-type Cu 5Ta 11O 30 and Cu 3Ta 7O 19 semiconducting polycrystalline films
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND POSITION;
BANDGAP TRANSITION;
BIPYRAMIDS;
BULK POWDERS;
CATHODIC PHOTOCURRENT;
CONDUCTION-BAND STATE;
DENSITY FUNCTIONAL THEORY METHODS;
ELECTRICAL CONTACTS;
ELECTROLYTE SOLUTIONS;
ELECTRONIC STRUCTURE CALCULATIONS;
FLAT BAND;
FLUORINE DOPED TIN OXIDE;
HIGH CARRIER MOBILITY;
HIGHER TEMPERATURES;
INCIDENT PHOTON-TO-CURRENT EFFICIENCIES;
METAL-TO-METAL CHARGE TRANSFERS;
MICROMETER SIZED PARTICLES;
MILD OXIDATION;
MOTT-SCHOTTKY;
OXIDATION TEMPERATURE;
OXIDATION TREATMENTS;
OXYGEN UPTAKE;
P-TYPE;
PHOTOELECTROCHEMICAL PROPERTIES;
POLYCRYSTALLINE FILM;
ULTRA-VIOLET LIGHT;
VALENCE BAND STATE;
CHARGE TRANSFER;
CONDUCTION BANDS;
COPPER COMPOUNDS;
DENSITY FUNCTIONAL THEORY;
ELECTRONIC STRUCTURE;
ENERGY GAP;
FILM PREPARATION;
HYDROGEN PRODUCTION;
NANOCOMPOSITES;
OXIDATION;
PHOTOCURRENTS;
PHOTONS;
POSITIVE IONS;
SEMICONDUCTING FILMS;
SEMICONDUCTING GLASS;
TANTALUM;
THERMOGRAVIMETRIC ANALYSIS;
TIN;
TIN OXIDES;
ULTRAVIOLET RADIATION;
COPPER;
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EID: 84861715427
PISSN: 19327447
EISSN: 19327455
Source Type: Journal
DOI: 10.1021/jp300267v Document Type: Article |
Times cited : (49)
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References (27)
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