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Volumn 116, Issue 19, 2012, Pages 10490-10497

Preparation and photoelectrochemical properties of p-type Cu 5Ta 11O 30 and Cu 3Ta 7O 19 semiconducting polycrystalline films

Author keywords

[No Author keywords available]

Indexed keywords

BAND POSITION; BANDGAP TRANSITION; BIPYRAMIDS; BULK POWDERS; CATHODIC PHOTOCURRENT; CONDUCTION-BAND STATE; DENSITY FUNCTIONAL THEORY METHODS; ELECTRICAL CONTACTS; ELECTROLYTE SOLUTIONS; ELECTRONIC STRUCTURE CALCULATIONS; FLAT BAND; FLUORINE DOPED TIN OXIDE; HIGH CARRIER MOBILITY; HIGHER TEMPERATURES; INCIDENT PHOTON-TO-CURRENT EFFICIENCIES; METAL-TO-METAL CHARGE TRANSFERS; MICROMETER SIZED PARTICLES; MILD OXIDATION; MOTT-SCHOTTKY; OXIDATION TEMPERATURE; OXIDATION TREATMENTS; OXYGEN UPTAKE; P-TYPE; PHOTOELECTROCHEMICAL PROPERTIES; POLYCRYSTALLINE FILM; ULTRA-VIOLET LIGHT; VALENCE BAND STATE;

EID: 84861715427     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp300267v     Document Type: Article
Times cited : (49)

References (27)
  • 17
    • 84862101211 scopus 로고    scopus 로고
    • Materials Data Incorporated: Livermore, CA
    • Jade 9; Materials Data Incorporated: Livermore, CA, 2009.
    • (2009) Jade 9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.