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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 3, 2012, Pages

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

(10) Hwang, Wan Sik a Tahy, Kristof a Nyakiti, Luke O b Wheeler, Virginia D b Myers Ward, Rachael L b Eddy, C R b Gaskill, D Kurt b Xing, Huili a Seabaugh, Alan a Jena, Debdeep a

a University of Notre Dame (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

Graphene Nanoribbon; Hydrogen silsesquioxane (HSQ); SiC wafer

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; FABRICATION; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHENE TRANSISTORS; HIGH-K DIELECTRIC; HYDROGEN; NANORIBBONS; SUBSTRATES;

ATOMIC-LAYER DEPOSITION; ELECTRON-BEAM; EPITAXIAL GRAPHENE; FIELD-EFFECT TRANSISTOR; GRAPHENE NANORIBBONS; GRAPHENE SUBSTRATES; HYDROGEN SILSESQUIOXANE; HYDROGEN-SILSESQUIOXANE; SEED LAYER; SIC WAFER;

SILICON CARBIDE;

EID: 84861670179 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3693593 Document Type: Article

Times cited : (20)

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