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Volumn 30, Issue 2, 2012, Pages

Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECTS; ELECTRON BEAMS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM;

EID: 84861626111     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3679547     Document Type: Article
Times cited : (4)

References (9)
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    • S. C. Hohng, Phys. Rev. B 60, 8883 (1999). 10.1103/PhysRevB.60.8883
    • (1999) Phys. Rev. B , vol.60 , pp. 8883
    • Hohng, S.C.1
  • 6
    • 79960979202 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.83.081309
    • D. M. Tex and I. Kamiya, Phys. Rev. B. 83, 081309(R) (2011). 10.1103/PhysRevB.83.081309
    • (2011) Phys. Rev. B. , vol.83
    • Tex, D.M.1    Kamiya, I.2
  • 8
    • 70449533121 scopus 로고    scopus 로고
    • 10.1016/j.cpc.2009.07.007
    • X. Gonze, Comput. Phys. Commun. 180, 2582 (2009). 10.1016/j.cpc.2009.07. 007
    • (2009) Comput. Phys. Commun. , vol.180 , pp. 2582
    • Gonze, X.1
  • 9
    • 0026259252 scopus 로고
    • 10.1016/0921-5107(91)90130-N
    • T. Y. Tan, Mater. Sci. Eng., B 10, 227 (1991). 10.1016/0921-5107(91) 90130-N
    • (1991) Mater. Sci. Eng., B , vol.10 , pp. 227
    • Tan, T.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.