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Volumn 30, Issue 2, 2012, Pages
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Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
DEFECTS;
ELECTRON BEAMS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM;
ANTI-SITE DEFECT;
EXCITON TRAPS;
EXPERIMENTAL EVIDENCE;
GAAS;
GROWTH CONDITIONS;
INTERMEDIATE STATE;
MBE GROWTH;
PHOTOLUMINESCENCE INTENSITIES;
SHALLOW DEFECTS;
SOURCE FLUX;
UP-CONVERSION;
GALLIUM ARSENIDE;
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EID: 84861626111
PISSN: 21662746
EISSN: 21662754
Source Type: Journal
DOI: 10.1116/1.3679547 Document Type: Article |
Times cited : (4)
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References (9)
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