Effect of geometry of a vertically aligned carbon nanotube pillar array on its field-emission properties

Surface and Interface Analysis

Volumn 44, Issue 6, 2012, Pages 776-779

  Sato, Hideki ^a   Haruki, Kazuo ^a   Watanabe, Masaaki ^a   Hata, Koichi ^a   Saito, Yahachi ^b  

^a MIE UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

carbon nanotubes; chemical vapor deposition; field emission; field emitter array; low turn on voltage; Morphology of carbon nanotube growth; pillar array; uniformity of emission; vertically aligned growth

Indexed keywords

CARBON NANOTUBE GROWTH; DOMINANT FACTOR; EMISSION SITE DISTRIBUTIONS; FE PROPERTIES; FIELD EMITTER ARRAYS; FIELD-EMISSION PROPERTIES; GROWTH MORPHOLOGY; PILLAR ARRAYS; VERTICALLY ALIGNED; VERTICALLY ALIGNED CARBON NANOTUBE;

CHEMICAL VAPOR DEPOSITION; FIELD EMISSION; MORPHOLOGY;

CARBON NANOTUBES;

EID: 84861618430     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3862     Document Type: Conference Paper

References (15)

1. Y. Saito, S. Uemura, Carbon 2000, 38, 169.
2. Y. Saito, S. Uemura, K. Hamaguchi, Jpn. J. Appl. Phys. 1998, 37, L346.
3. S. Uemura, J. Yotani, T. Nagasako, H. Kurachi, H. Yamada, T. Ezaki, T. Maesoba, T. Nakao, Y. Saito, M. Yumura, SID'02 Digest, 2002, 1132.
4. C.-C. Kuo, Y. Z. Chen, C. C. Kao, J. S. Fang, K. Cheng, D. Yeh, C. Y. Hsiao, T. F. Chan, Proc. IDW'07, 2007, 2161.
5. G. Delepierre, R. Mahfouz, F. J. Cadete Santos Aires, J. Dijon, J. Appl. Phys. 2010, 108, 144308.
6. Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Siegal, P. N. Provencio, Science 1998, 282, 1105.
7. A. C. Dupuis, Prog. Mater. Sci. 2005, 50, 929.
8. D. McClain, J. Wu, N. Tavan, J. Jiao, C. M. McCarter, R. F. Richards, S. Mesarovic, C. D. Richards, D. F. Bahr, J. Phys. Chem. C 2007, 111, 7514.
9. S. Fujii, S. Honda, H. Kawai, K. Ishida, K. Oura, M. Katayama, Diamond Relat. Mater. 2008, 17, 556.
10. Y. M. Wong, W. P. Kanga, J. L. Davidson, B. K. Choi, W. Hofmeister, J. H. Huang, Diamond Relat. Mater. 2005, 14, 2078.
11. J. L. Killian, N. B. Zuckerman, D. L. Niemann, B. P. Ribaya, M. Rahman, R. Espinosa, M. Meyyappan, C. V. Nguyen, J. Appl. Phys. 2008, 103, 064312.
12. L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, K. Kern, Appl. Phys. Lett. 2001, 76, 2071.
13. R. C. Smith, S. R. P. Silva, Appl. Phys. Lett. 2009, 94, 133104.
14. M. Chhowalla, K. B. K. Teo, C. Ducati, N. L. Rupesinghe, G. A. J. Amaratunga, A. C. Ferrari, D. Roy, J. Robertson, W. I. Milne, J. Appl. Phys. 2001, 90, 5308.
15. C. Y. Chang, S. M. Sze, ULSI Technology, McGraw-Hill, New York, 1996.