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Volumn 48, Issue 7, 2012, Pages 397-399

InAlAs APD with high multiplied responsivity-bandwidth product (MR-bandwidth product) of 168A/W·GHz for 25Gbit/s high-speed operations

Author keywords

[No Author keywords available]

Indexed keywords

3 DB BANDWIDTH; ABSORPTION LAYER; HIGH-SPEED OPERATION; INALAS; RESPONSIVITY;

EID: 84861599749     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.0100     Document Type: Article
Times cited : (40)

References (9)
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    • Kinsey, G.S., Campbell, J.C., and Dentai, A.G.: ' Waveguide avalanche photodiode operating at 1.55-m with a gain-bandwidth product of 320GHz ', IEEE Photonics Technol. Lett., 2001, 13, p. 842 10.1109/68.935822 1041-1135
    • (2001) IEEE Photonics Technol. Lett. , vol.13 , pp. 842
    • Kinsey, G.S.1    Campbell, J.C.2    Dentai, A.G.3
  • 3
    • 67749084435 scopus 로고    scopus 로고
    • Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product
    • 10.1364/OE.17.012641 1094-4087
    • Zaoui, W.S., Chen, H.W., Bowers, J.E., Kang, Y., Morse, M., Paniccia, M.J., Pauchard, A., and Campbell, J.C.: ' Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth- product ', Opt. Express, 2009, 17, p. 12641 10.1364/OE.17.012641 1094-4087
    • (2009) Opt. Express , vol.17 , pp. 12641
    • Zaoui, W.S.1    Chen, H.W.2    Bowers, J.E.3    Kang, Y.4    Morse, M.5    Paniccia, M.J.6    Pauchard, A.7    Campbell, J.C.8
  • 4
    • 77950426454 scopus 로고    scopus 로고
    • High-speed and high-efficiency InP/InGaAs waveguide avalanche photodiodes for 40Gbit/s transmission systems
    • Los Angeles, CA, USA, Paper TuM2
    • Yasuoka, N., Kuwatsuka, H., Kuramata, A., Uchida, T., Yoneda, Y., and Nakai, S.: ' High-speed and high-efficiency InP/InGaAs waveguide avalanche photodiodes for 40Gbit/s transmission systems ', Proc. Optical Fiber Communication Conf., (OFC), Los Angeles, CA, USA, 2004, Paper TuM2
    • (2004) Proc. Optical Fiber Communication Conf., (OFC)
    • Yasuoka, N.1    Kuwatsuka, H.2    Kuramata, A.3    Uchida, T.4    Yoneda, Y.5    Nakai, S.6
  • 6
    • 34247275294 scopus 로고    scopus 로고
    • 40Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer
    • 10.1049/el:20070344 0013-5194
    • Shimizu, S., Shiba, K., Nakata, T., Kasahara, K., and Makita, K.: ' 40Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer ', Electron. Lett., 2007, 43, p. 476 10.1049/el:20070344 0013-5194
    • (2007) Electron. Lett. , vol.43 , pp. 476
    • Shimizu, S.1    Shiba, K.2    Nakata, T.3    Kasahara, K.4    Makita, K.5
  • 7
    • 84857481010 scopus 로고    scopus 로고
    • Inverted p-down avalanche photodiode with low-high-low field profile
    • 10.1143/JJAP.51.02BG03 0021-4922
    • Nada, M., Muramoto, Y., Shigekawa, N., Yokoyama, H., Ishibashi, T., and Kodama, S.: ' Inverted p-down avalanche photodiode with low-high-low field profile ', Jpn. J. Appl. Phys., 2012, 51, p. 02BG03 10.1143/JJAP.51.02BG03 0021-4922
    • (2012) Jpn. J. Appl. Phys. , vol.51
    • Nada, M.1    Muramoto, Y.2    Shigekawa, N.3    Yokoyama, H.4    Ishibashi, T.5    Kodama, S.6
  • 8
    • 0345134633 scopus 로고    scopus 로고
    • InP/InGaAs pin photodiode structure maximising bandwidth and efficiency
    • 10.1049/el:20031116 0013-5194
    • Muramoto, Y., and Ishibashi, T.: ' InP/InGaAs pin photodiode structure maximising bandwidth and efficiency ', Electron. Lett., 2003, 39, p. 1749 10.1049/el:20031116 0013-5194
    • (2003) Electron. Lett. , vol.39 , pp. 1749
    • Muramoto, Y.1    Ishibashi, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.