-
1
-
-
0035423510
-
Waveguide avalanche photodiode operating at 1.55-m with a gain-bandwidth product of 320GHz
-
10.1109/68.935822 1041-1135
-
Kinsey, G.S., Campbell, J.C., and Dentai, A.G.: ' Waveguide avalanche photodiode operating at 1.55-m with a gain-bandwidth product of 320GHz ', IEEE Photonics Technol. Lett., 2001, 13, p. 842 10.1109/68.935822 1041-1135
-
(2001)
IEEE Photonics Technol. Lett.
, vol.13
, pp. 842
-
-
Kinsey, G.S.1
Campbell, J.C.2
Dentai, A.G.3
-
2
-
-
58049112884
-
Monolithic germanium/silicon avalanche photodiodes with 340GHz gain-bandwidth product
-
10.1038/nphoton.2008.247
-
Kang, Y.M., Liu, H.D., Morse, M., Paniccia, M.J., Zadka, M., Litski, S., Sarid, G., Pauchard, A., Kuo, Y.H., Chen, H.W., Zaoui, W.S., Bowers, J.E., Beling, A., McIntosh, D.C., Zheng, X.G., and Campbell, J.C.: ' Monolithic germanium/silicon avalanche photodiodes with 340GHz gain-bandwidth product ', Nature Photonics, 2009, 3, p. 59 10.1038/nphoton.2008.247
-
(2009)
Nature Photonics
, vol.3
, pp. 59
-
-
Kang, Y.M.1
Liu, H.D.2
Morse, M.3
Paniccia, M.J.4
Zadka, M.5
Litski, S.6
Sarid, G.7
Pauchard, A.8
Kuo, Y.H.9
Chen, H.W.10
Zaoui, W.S.11
Bowers, J.E.12
Beling, A.13
McIntosh, D.C.14
Zheng, X.G.15
Campbell, J.C.16
-
3
-
-
67749084435
-
Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product
-
10.1364/OE.17.012641 1094-4087
-
Zaoui, W.S., Chen, H.W., Bowers, J.E., Kang, Y., Morse, M., Paniccia, M.J., Pauchard, A., and Campbell, J.C.: ' Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth- product ', Opt. Express, 2009, 17, p. 12641 10.1364/OE.17.012641 1094-4087
-
(2009)
Opt. Express
, vol.17
, pp. 12641
-
-
Zaoui, W.S.1
Chen, H.W.2
Bowers, J.E.3
Kang, Y.4
Morse, M.5
Paniccia, M.J.6
Pauchard, A.7
Campbell, J.C.8
-
4
-
-
77950426454
-
High-speed and high-efficiency InP/InGaAs waveguide avalanche photodiodes for 40Gbit/s transmission systems
-
Los Angeles, CA, USA, Paper TuM2
-
Yasuoka, N., Kuwatsuka, H., Kuramata, A., Uchida, T., Yoneda, Y., and Nakai, S.: ' High-speed and high-efficiency InP/InGaAs waveguide avalanche photodiodes for 40Gbit/s transmission systems ', Proc. Optical Fiber Communication Conf., (OFC), Los Angeles, CA, USA, 2004, Paper TuM2
-
(2004)
Proc. Optical Fiber Communication Conf., (OFC)
-
-
Yasuoka, N.1
Kuwatsuka, H.2
Kuramata, A.3
Uchida, T.4
Yoneda, Y.5
Nakai, S.6
-
5
-
-
34247216090
-
High-sensitivity 40-Gb/s receiver with a wideband InAIAs waveguide avalanche photodiode
-
Copenhagen, Denmark, Paper 10.5.1
-
Nakata, T., Takeuchi, T., Makita, K., Amamiya, Y., Kato, T., Suzuki, Y., and Torikai, T.: ' High-sensitivity 40-Gb/s receiver with a wideband InAIAs waveguide avalanche photodiode ', Proc. European Conf. and Exhibition on Optical Communication (ECOC), Copenhagen, Denmark, 2002, Paper 10.5.1
-
(2002)
Proc. European Conf. and Exhibition on Optical Communication (ECOC)
-
-
Nakata, T.1
Takeuchi, T.2
Makita, K.3
Amamiya, Y.4
Kato, T.5
Suzuki, Y.6
Torikai, T.7
-
6
-
-
34247275294
-
40Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer
-
10.1049/el:20070344 0013-5194
-
Shimizu, S., Shiba, K., Nakata, T., Kasahara, K., and Makita, K.: ' 40Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer ', Electron. Lett., 2007, 43, p. 476 10.1049/el:20070344 0013-5194
-
(2007)
Electron. Lett.
, vol.43
, pp. 476
-
-
Shimizu, S.1
Shiba, K.2
Nakata, T.3
Kasahara, K.4
Makita, K.5
-
7
-
-
84857481010
-
Inverted p-down avalanche photodiode with low-high-low field profile
-
10.1143/JJAP.51.02BG03 0021-4922
-
Nada, M., Muramoto, Y., Shigekawa, N., Yokoyama, H., Ishibashi, T., and Kodama, S.: ' Inverted p-down avalanche photodiode with low-high-low field profile ', Jpn. J. Appl. Phys., 2012, 51, p. 02BG03 10.1143/JJAP.51.02BG03 0021-4922
-
(2012)
Jpn. J. Appl. Phys.
, vol.51
-
-
Nada, M.1
Muramoto, Y.2
Shigekawa, N.3
Yokoyama, H.4
Ishibashi, T.5
Kodama, S.6
-
8
-
-
0345134633
-
InP/InGaAs pin photodiode structure maximising bandwidth and efficiency
-
10.1049/el:20031116 0013-5194
-
Muramoto, Y., and Ishibashi, T.: ' InP/InGaAs pin photodiode structure maximising bandwidth and efficiency ', Electron. Lett., 2003, 39, p. 1749 10.1049/el:20031116 0013-5194
-
(2003)
Electron. Lett.
, vol.39
, pp. 1749
-
-
Muramoto, Y.1
Ishibashi, T.2
-
9
-
-
77956280417
-
240-GHz gain-bandwidth product back-side illuminated AlInAs avalanche photodiodes
-
10.1109/LPT.2010.2057503 1041-1135
-
Lahrichi, M., Glastre, G., Derouin, E., Carpentier, D., Lagay, N., Decobert, J., and Achouche, M.: ' 240-GHz gain-bandwidth product back-side illuminated AlInAs avalanche photodiodes ', IEEE Photonics Technol. Lett., 2010, 22, p. 1373 10.1109/LPT.2010.2057503 1041-1135
-
(2010)
IEEE Photonics Technol. Lett.
, vol.22
, pp. 1373
-
-
Lahrichi, M.1
Glastre, G.2
Derouin, E.3
Carpentier, D.4
Lagay, N.5
Decobert, J.6
Achouche, M.7
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