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Applied Physics A: Materials Science and Processing

Volumn 107, Issue 2, 2012, Pages 393-400

Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni 2+ ion implanted zinc oxide (ZnO) thin films

(5) Joshi, B a Ghosh, S b Srivastava, P b Kumar, P c Kanjilal, D c

a GAUTAM BUDDHA UNIVERSITY (India)

b INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

c INTER UNIVERSITY ACCELERATOR CENTRE (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND CONDUCTION; CONDUCTION MECHANISM; DC ELECTRICAL; ELECTRICAL CONDUCTION; ELECTRICAL TRANSPORT; EMISSION OF ELECTRON; ION IMPLANTED; LOW TEMPERATURES; NEAREST NEIGHBOR HOPPING; POLYCRYSTALLINE FILM; POLYCRYSTALLINE ZNO; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; TEMPERATURE CURVES; VAPOR PHASE TRANSPORT; VARIABLE TEMPERATURE; VARIABLE-RANGE-HOPPING CONDUCTIONS; ZINC OXIDE (ZNO); ZNO THIN FILM;

ELECTRIC CONDUCTIVITY; FERROMAGNETISM; GRAIN BOUNDARIES; ION IMPLANTATION; METALLIC FILMS; THERMIONIC EMISSION;

ZINC OXIDE;

EID: 84861572382 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-012-6785-x Document Type: Article

Times cited : (14)

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