Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material

Microsystem Technologies

Volumn 18, Issue 6, 2012, Pages 787-795

  Marauska, S ^a   Hrkac, V ^b   Dankwort, T ^a   Jahns, R ^b   Quenzer, H J ^a   Knochel R ^b   Kienle, L ^b   Wagner, B ^a  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; COMPREHENSIVE STUDIES; DIELECTRIC PERMITTIVITIES; EFFECTIVE TRANSVERSE PIEZOELECTRIC COEFFICIENT; ETCHING RATE; LOW PROCESS TEMPERATURE; MEMS MATERIALS; MEMS SENSORS; PIEZOELECTRIC COEFFICIENT; RF BIAS; RF-SPUTTERING; ROCKING CURVE WIDTH; SPUTTERED THIN FILMS; STRESS LEVELS;

ALUMINUM NITRIDE; DIELECTRIC LOSSES; MEMS; PERMITTIVITY; PLATINUM; WET ETCHING;

PIEZOELECTRICITY;

EID: 84861532380     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-012-1493-1     Document Type: Article

References (34)

1. Ababneh A, Schmid U, Hernando J, Sánchez-Roja JL, Seidel H (2010) The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films. Mater Sci Eng B 172: 253-258
2. Benetti M et al (2006) Growth and characterization of piezoelectric AlN thin films for diamond-based surface acoustic wave devices. Thin Solid Films 497: 304-308 (Pubitemid 43061096)
3. Bickermann M, Schmidt S, Epelbaum BM, Heinemann P, Magata S, Winnacker A (2007) Wet KOH etching of freestanding AlN single crystals. J Cryst Growth 300: 299-307 (Pubitemid 46386049)
4. Chen D, Xu D, Wang J, Zhao B, Zhang Y (2009) Dry etching of AlN films using the plasma generated by fluoride. Vacuum 83: 282-285
5. Chiu KH, Chen JH, Chen HR, Huang RS (2007) Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator. Thin Solid Films 515: 4819-4825
6. Dubois MA, Muralt P (2001) Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering. J Appl Phys 89(11): 6389-6395 (Pubitemid 33599383)
7. Greve H, Woltermann E, Jahns J et al (2010) Low damping resonant magnetoelectric sensors. Appl Phys Lett 97: 152503
8. Iriarte GF, Engelmark F, Katardjiev IV (2002) Reactive sputter deposition of highly oriented AlN films at room temperature. J Mater Res 17(6): 1469-1475 (Pubitemid 34798470)
9. Iwata S, Nanjo Y, Okuno T, Kurai S, Taguchi T (2007) Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxy. J Cryst Growth 301-302: 461-464 (Pubitemid 46441061)
10. Kar JP, Mukherjee S, Bose G, Tuli S, Myoung JM (2009) Impact of post-deposition annealing on the surface, bulk and interface properties of RF sputtered AlN films. Mater Sci Technol 25: 1023-1027
11. Karakaya K, Renaud M, Goedbloed M, van Schaijk R (2008) The effect of the built-in stress level of AlN layers on the properties of piezoelectric vibration. J Micromech Microeng 18: 104012
12. Kim HH, Ju BK, Lee YH, Lee SH, Lee JK, Kim SW (2001) A noble suspended type thin film resonator (STFR) using the SOI technology. Sens Actuator A 89: 255-258 (Pubitemid 32296918)
13. Kumagai Y, Yamane T, Koukitu A (2005) Growth of thick AlN layers by hydride vapor-phase epitaxy. J Cryst Growth 28: 62-67 (Pubitemid 40851938)
14. Lanz R, Lambert C, Senn L, Gabathuler L, Reynolds GJ (2006) Aluminum-nitride manufacturing solution for BAW and other MEMS applications using a novel, high-uniformity PVD source. Proc IEEE Int Ultrason 15: 1481-1485
15. Lee Hwan-Chul, Lee Jai-Young (1997) Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive r.f. magnetron sputtering. J Mater Sci Mater Electron 8: 385-390
16. Loebl HP, Klee M, Metzmacher C, Brand W, Milsom R, Lok P (2003) Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators. Mater Chem Phys 79: 143-146
17. Martin F, Muralt P (2006) Process optimization for the sputter deposition of molybdenum thin films as electrode for AlN thin films. J Vac Sci Technol A 24: 946-952 (Pubitemid 43959097)
18. Martin F, Muralt P, Dubois MA, Pezous A (2004) Thickness dependence of properties of highly c-axis textured AlN thin films. J Vac Sci Technol 22: 361-365
19. Matsumoto T, Kiuchi M (2006) Zinc-blende aluminum nitride formation using low-energy ion beam assisted deposition. Nucl Instrum B 242: 424-426 (Pubitemid 41745365)
20. Medjani F, Sanjinés R, Allidi G, Karimi A (2006) A effect of substrate temperature and bias voltage on the crystallite orientation in RF magnetron sputtered AlN thin films. Thin Solid Films 515: 260-265 (Pubitemid 44572091)
21. Muralt P, Antifakos J, Cantoni M, Lanz R, Martin F (2005) Is there a better material for thin film BAW applications than AlN? In: Proceedings of the IEEE ultrasonics symposium, pp 315-320 (Pubitemid 46285437)
22. Prume K, Muralt P, Calame F, Schmitz-Kempen T, Tiedke S (2007)Extensive electromechanical characterization of PZT thin films for MEMS applications by electrical and mechanical excitation signals. J Electroceram 19: 407-411 (Pubitemid 350278413)
23. Quenzer HJ, Drechsler U, Sebastian A, Marauska S, Wagner B, Despont M (2011) Fabrication of conducting AFM cantilevers with integrated piezoelectric actuation and sensing. Proc Eurosensors 25: 665-668
24. Ristoscu C, Ducu C, Socol G, Craciunoiu F, Mihailescu IN (2005)Structural and optical characterization of AlN films grown by pulsed laser deposition. Appl Surf Sci 248: 411-415 (Pubitemid 40752270)
25. Saravanan S, Keim SEG, Krijnen GJM, Elwenspoek M (2005) Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates. Springer Proc Phys 107: 75-78
26. Saravanan S, Berenschot E, Krijnen G, Elwenspoek M (2006) A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators. Sens Actuator A 130-131: 340-345 (Pubitemid 44037295)
27. Sato A, Azumada K, Atsumori T, Hara K (2007) Characterization ofAlN: Mn thin film phosphors prepared by metalorganic chemical vapor deposition. J Cryst Growth 298: 379-382 (Pubitemid 46149697)
28. Shul RJ, Willison CG, Bridges MM et al (1998) High-density plasmaetch selectivity for the III-V nitrides. Solid State Electron 42: 2269-2276 (Pubitemid 128410361)
29. Song X, Fu R, He H (2009) Frequency effects on the dielectricproperties of AlN film deposited by radio frequency reactive magnetron sputtering. Microel Eng 86: 2217-2221
30. Stevens KS, Ohtani A, Beresford R (1994) Microstructure of AlN onSi (111) grown by plasma-assisted molecular beam epitaxy. Appl Phys Lett 65: 321-323
31. Tanner SM, Felmetsger VV (2010) Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputtering. J Vac Sci Technol A 28: 69-76
32. Tonisch K, Cimalla V, Foerster C, Romanus H, Ambacher O, Dontsov D (2006) Piezoelectric properties of polycrystalline AlN thin films for MEMS application. Sens Actuator a 132: 658-663 (Pubitemid 44711990)
33. Zhang JX, Cheng H, Chen YZ et al (2005) Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering. Surf Coat Technol 198: 68-73 (Pubitemid 40854661)
34. Zhuang D, Edgar JH (2005) Wet etching of GaN, AlN, and SiC: a review. Mater Sci Eng 48: 1-46