Molecular engineering versus energy level alignment: Interface formation between oligothiophene derivatives and a metal substrate studied with photoemission spectroscopy

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5456-5461

  Makinen A J ^a   Hill, I G ^a   Kinoshita, M ^b   Noda, T ^b   Shirota, Y ^b   Kafafi, Z H ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AG SUBSTRATE; CARRIER INJECTION; CONJUGATION LENGTH; DEVICE STRUCTURES; ELECTRON-ACCEPTING; ELECTRON-DEFICIENT; ELECTRON-RICH; ENERGY LEVEL ALIGNMENT; FRONTIER ORBITALS; HIGHEST OCCUPIED MOLECULAR ORBITAL; INTERFACE FORMATION; METAL SUBSTRATE; METAL/ORGANIC INTERFACES; MOLECULAR ENGINEERING; MOLECULAR LENGTH; OLIGOTHIOPHENE DERIVATIVE; OLIGOTHIOPHENES; ORGANIC LIGHT EMITTING DIODES(OLEDS);

LIGHT EMITTING DIODES; MOLECULES; PHOTOELECTRON SPECTROSCOPY; QUANTUM CHEMISTRY; SELF ASSEMBLY; SUBSTRATES;

INTERFACES (MATERIALS);

EID: 84861439980     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1464209     Document Type: Article

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