Influence of boron on radiation enhanced diffusion of antimony in delta-doped silicon

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4073-4077

  Leveque P ^a   Christensen, J S ^a   Kuznetsov, A Yu ^a,b   Svensson, B G ^a,b   Larsen, A Nylandsted ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF OSLO   (Norway)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

DELTA-DOPED; DELTA-DOPED LAYERS; ELEVATED TEMPERATURE; GENERATION RATE; IRRADIATION TEMPERATURE; RADIATION ENHANCED DIFFUSION; SILICON SAMPLES;

MOLECULAR BEAM EPITAXY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY;

DIFFUSION;

EID: 84861427765     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448896     Document Type: Article

References (9)

1. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989). rmp RMPHAT 0034-6861
2. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraìz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997). jap JAPIAU 0021-8979
3. H.-J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate, Appl. Phys. Lett. 63, 639 (1993). apl APPLAB 0003-6951
4. P. Fahey, G. Barbuscia, M. Moslehi, and R. W. Dutton, Appl. Phys. Lett. 46, 784 (1985). apl APPLAB 0003-6951
5. P. Léveque, A. Yu. Kuznetsov, J. S. Christensen, B. G. Svensson, and A. Nylandsted Larsen, J. Appl. Phys. 89, 5400 (2001). jap JAPIAU 0021-8979
6. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 170, 208 (1980). nui NUIMAL 0029-554X
7. N. E. B. Cowern, K. T. F. Janssen, G. F. A. van de Walle, and D. J. Gravesteijn, Phys. Rev. Lett. 65, 2434 (1990). prl PRLTAO 0031-9007
8. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B 52, 16542 (1995). prb PRBMDO 0163-1829
9. P. Léveque and A. Yu. Kuznetsov (unpublished).