CdGeN2 and ZnGe0.5Sn0.5N2: Two new nitride semiconductors with band gaps in the blue-green

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 1331-1334

  Punya, Atchara ^a   Lambrecht, Walter R L ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

Band structure; GW method; Nitrides

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CALCULATIONS; ENERGY GAP; GERMANIUM COMPOUNDS; LATTICE CONSTANTS; LOCAL DENSITY APPROXIMATION; NITRIDES; ORBITAL CALCULATIONS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; TIN COMPOUNDS; ZINC SULFIDE;

EXCITON-BINDING ENERGY; FIRST-PRINCIPLES CALCULATION; FULL-POTENTIAL LINEARIZED MUFFIN-TIN ORBITAL; GW METHOD; INTERNAL PARAMETERS; NITRIDE SEMICONDUCTORS; ORTHORHOMBIC STRUCTURES; ZERO POINT MOTION;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 84861414630     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.1331     Document Type: Conference Paper

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