Study of polymorphous silicon as thermo-sensing film for infrared detectors

Materials Science and Engineering: B

Volumn 177, Issue 10, 2012, Pages 756-761

  Moreno, M ^a   Torres, A ^a   Ambrosio, R ^b   Torres, E ^c   Rosales, P ^a   Zuniga C ^a   Reyes Betanzo, C ^a   Calleja, W ^a   De La Hidalga, J ^a   Monfil, K ^b  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE CIUDAD JUÁREZ   (Mexico)

^c UNIVERSIDAD POPULAR AUTÓNOMA DEL ESTADO DE PUEBLA   (Mexico)

Author keywords

Amorphous silicon; Microbolometers; Polymorphous silicon

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; BOLOMETERS; DEPOSITION; INFRARED DETECTORS; SILICON DETECTORS; TEMPERATURE SENSORS; THIN FILMS;

ELECTRICAL CHARACTERISTIC; INFRARED DETECTION; MICRO-BOLOMETERS; POLYMORPHOUS SILICON; RESPONSIVITY; ROOM-TEMPERATURE CONDUCTIVITY; SENSING ELEMENTS; SENSING FILMS; SI:H THIN FILM; THERMAL COEFFICIENT OF RESISTANCE;

AMORPHOUS SILICON;

EID: 84861230827     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2012.02.002     Document Type: Article

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