Top-down process of Germanium nanowires using EBL exposure of hydrogen silsesquioxane resist

2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012

Volumn , Issue , 2012, Pages 145-147

  Yu, Ran ^a   Das, Samaresh ^a   Hobbs, Richard ^a   Georgiev, Yordan ^a   Ferain, Isabelle ^a   Razavi, Pedram ^a   Akhavan, Nima Dehdashti ^a   Colinge, Cynthia A ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Electron beam lithography; Germanium nanowires; Hydrogen Silsesquixane (HSQ); Nitride hard mask

Indexed keywords

GERMANIUM NANOWIRES; HARD MASKS; HYDROGEN SILSESQUIOXANE; NEGATIVE PHOTORESISTS; STABLE SURFACES; TOP-DOWN PROCESS;

GERMANIUM; HYDROGEN; NANOWIRES; PHOTORESISTS; SILICON NITRIDE;

ELECTRON BEAM LITHOGRAPHY;

EID: 84861211313     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2012.6193378     Document Type: Conference Paper

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