310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection

Optics Express

Volumn 20, Issue 10, 2012, Pages 11031-11036

  Duan, Ning ^a   Liow, Tsung Yang ^a   Lim, Andy Eu Jin ^a   Ding, Liang ^a   Lo, G Q ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; GERMANIUM; IMPACT IONIZATION; PHOTODETECTORS; PRODUCT DESIGN;

AVALANCHE PHOTODETECTORS; DEPLETION REGION; ELECTRIC FIELD DISTRIBUTIONS; GAIN-BANDWIDTH PRODUCTS; LIGHT DETECTION; NORMAL INCIDENCE; SELECTIVE EPITAXIAL GROWTH; SEPARATE-ABSORPTION-CHARGE MULTIPLICATIONS;

BANDWIDTH;

EID: 84861159420     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.011031     Document Type: Article

References (18)

1. H. Nie, K. Anselm, C. Hu, S. Murtaza, B. Streetman, and J. Campbell, "High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product," Appl. Phys. Lett. 70(2), 161-163 (1997). (Pubitemid 127662455)
2. N. Yasuoka, H. Kuwatsuka, M. Makiuchi, T. Uchida, and A. Yasaki, "Large multiplication-bandwidth products in APDs with a thin InP multiplication layer," in The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003 (IEEE/LEOS, 2003), Vol. 2, pp. 999-1000.
3. J. Campbell, W. Tsang, G. Qua, and B. Johnson, "High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum Electron. 24(3), 496-500 (1988). (Pubitemid 18638815)
4. A. Rouvie, D. Carpentier, N. Lagay, J. Decobert, F. Pommereau, and M. Achouche, "High gain bandwidth product over 140 GHz planar junction AlInAs avalanche photodiodes," IEEE Photon. Technol. Lett. 20(6), 455-457 (2008).
5. E. Yagyu, E. Ishimura, M. Nakaji, H. Itamoto, T. Aoyagi, K. Yoshiara, and Y. Tokuda, "Recent advances in AlInAs avalanche photodiodes," Proc. OFC, 145-147 (2007).
6. S. Demiguel, X. Zheng, N. Li, X. Li, J. Campbell, J. Decobert, N. Tscherptner, and A. Anselm, "Highresponsivity and high-speed evanescently-coupled avalanche photodiodes," Electron. Lett. 39(25), 1848-1849 (2003).
7. Y. Kang, M. Zadka, S. Litski, G. Sarid, M. Morse, M. J. Paniccia, Y. H. Kuo, J. Bowers, A. Beling, H. D. Liu, D. C. McIntosh, J. Campbell, and A. Pauchard, "Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection," Opt. Express 16(13), 9365-9371 (2008).
8. X. Wang, L. Chen, W. Chen, H. Cui, Y. Hu, P. Cai, R. Yang, C. Hong, D. Pan, K. Ang, M. B. Yu, Q. Fang, and G. Q. Lo, "80 GHz bandwidth-gain- product Ge/Si avalanche photodetector by selective Ge growth," in Optical Fiber Communication Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper OMR3.
9. R. Emmons, "Avalanche-photodiode frequency response," J. Appl. Phys. 38(9), 3705-3714 (1967).
10. R. McIntyre, "The distribution of gains in uniformly multiplying avalanche photodiodes: theory," IEEE Trans. Electron. Devices 19(6), 703-713 (1972).
11. Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, "Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product," Nat. Photonics 3(1), 59-63 (2009).
12. L. Tarof, J. Yu, R. Bruce, D. G. Knight, T. Baird, and B. Oosterbrink, "High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes," IEEE Photon. Technol. Lett. 5(6), 672-674 (1993). (Pubitemid 23695307)
13. N. Duan, S. Wang, X. G. Zheng, X. Li, N. Li, J. C. Campbell, C. Wang, and L. A. Coldren, "Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs/InAlAs SACM avalanche photodiodes," IEEE J. Quantum Electron. 41(4), 568-572 (2005). (Pubitemid 40555789)
14. C. Masini, L. Calace, G. Assanto, H.-C. Luan, and L. C. Kimerling, "High- performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration," IEEE Trans. Electron. Dev. 48(6), 1092-1096 (2001). (Pubitemid 32576941)
15. Y. S. Shin, D. Lee, H. S. Lee, Y. J. Cho, C. J. Kim, and M. H. Jo, "Determination of the photocarrier diffusion length in intrinsic Ge nanowires," Opt. Express 19(7), 6119-6124 (2011).
16. Y. Hirota, S. Ando, and T. Ishibashi, "High-speed avalanche photodiode with a neutral absorption layer for 1.55 μm wavelength," Jpn. J. Appl. Phys. 43(No. 3A), L375-L377 (2004).
17. K. Shiba, T. Nakata, T. Takeuchi, K. Kasahara, and K. Makita, "Theoretical and experimental study on waveguide avalanche photodiodes with an undepleted absorption layer for 25-Gb/s operation," IEEE J. Lightwave Technol. 29(2), 153-161 (2011).
18. S. Sze, Physics of Semiconductor Devices (Wiley, 1981), Chap. 1.