Enhanced lithographic imaging layer meets semiconductor manufacturing specification a decade early

Advanced Materials

Volumn 24, Issue 19, 2012, Pages 2608-2613

  Tseng, Yu Chih ^a   Mane, Anil U ^a   Elam, Jeffrey W ^a   Darling, Seth B ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

lithography; patterning; resists; semiconductors; sequential infiltration synthesis (SIS)

Indexed keywords

HARD MASKS; HIGH ASPECT RATIO; PATTERN COLLAPSE; PATTERNING; POLYMERIC RESIST; RESIST LAYERS; RESISTS; SCANNING ELECTRON MICROSCOPY IMAGE; SEMICONDUCTOR MANUFACTURING; SEQUENTIAL INFILTRATION SYNTHESIS (SIS);

ALUMINA; ASPECT RATIO; LITHOGRAPHY; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR DEVICE MANUFACTURE;

ALUMINUM OXIDE; POLY(METHYL METHACRYLATE); SILICON DIOXIDE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR;

ALUMINUM OXIDE; POLYMETHYL METHACRYLATE; SEMICONDUCTORS; SILICON DIOXIDE;

EID: 84861019673     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201104871     Document Type: Article

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