Effect of Ga doping on the physical properties of La 0.7(CaSr) 0.3Mn 1-xGa xO 3 (x=0, 0.025, 0.05, 0.075 and 0.1)

IOP Conference Series: Materials Science and Engineering

Volumn 28, Issue 1, 2012, Pages

  Othmani, S ^a   Balli, M ^b  

^a University of Sfax   (Tunisia)

^b UNIVERSITY OF APPLIED SCIENCES WESTERN SWITZERLAND   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GA CONTENT; GA DOPING; MAGNETIC AND TRANSPORT PROPERTIES; STRUCTURAL PARAMETER; TEMPERATURE DEPENDENCE;

MANGANESE; MANGANESE OXIDE; SEMICONDUCTOR INSULATOR BOUNDARIES; SOL-GEL PROCESS; TRANSPORT PROPERTIES;

GALLIUM;

EID: 84860689474     PISSN: 17578981     EISSN: 1757899X     Source Type: Conference Proceeding    
DOI: 10.1088/1757-899X/28/1/012053     Document Type: Conference Paper

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