Defect energy levels and electronic behavior of Ni-, Co-, and As-doped synthetic pyrite (FeS 2)

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Lehner, S W ^a   Newman, N ^b   Van Schilfgaarde, M ^b   Bandyopadhyay, S ^b   Savage, K ^c   Buseck, P R ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c WOFFORD COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PEAKS; CONDUCTION-BAND MINIMUM; DEFECT ENERGY LEVEL; DEFECT LEVELS; DONOR LEVELS; ELECTRONIC BEHAVIORS; ELECTRONIC STRUCTURE CALCULATIONS; ENERGY POSITION; HALL CONCENTRATION; HALL MEASUREMENTS; NI ATOMS; NI-DOPED; OPTICAL SPECTRA; OPTICAL TRANSMISSION SPECTROSCOPY; STATISTICAL MODELS; TEMPERATURE DEPENDENT; VALENCE BAND DOS;

DEFECTS; VAPORS;

DOPING (ADDITIVES);

EID: 84860544014     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4706558     Document Type: Article

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