Characterization and luminescence properties of AlON:Eu 2 phosphor for white-emitting-diode illumination

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Zhang, F ^a   Chen, S ^a   Chen, J F ^a   Zhang, H L ^a   Li, J ^a   Liu, X J ^a   Wang, S W ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND SHIFT; BIEXPONENTIAL DECAY; CHROMATICITY COORDINATES; DOPING CONCENTRATION; DOPING SITES; EMISSION INTENSITY; INTERNAL QUANTUM EFFICIENCY; LUMINESCENCE PROPERTIES; SOLID STATE REACTION METHOD; TEMPERATURE DEPENDENT; WHITE LIGHT EMITTING DIODES;

EUROPIUM; LIGHT EMITTING DIODES; PHOSPHORS; SOLID STATE REACTIONS;

LIGHT EMISSION;

EID: 84860520969     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4705404     Document Type: Article

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