Stress-induced domain dynamics and phase transitions in epitaxially grown VO 2 nanowires

Nanotechnology

Volumn 23, Issue 20, 2012, Pages

  Sohn, Jung Inn ^a,b   Joo, Heung Jin ^a,c   Kim, Keun Soo ^d,e   Yang, Hyoung Woo ^d   Jang, A Rang ^d   Ahn, Docheon ^f   Lee, Hyun Hwi ^f   Cha, Seungnam ^b   Kang, Dae Joon ^d   Kim, Jong Min ^b   Welland, Mark E ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d Sungkyunkwan University   (South Korea)

^e Sejong University   (South Korea)

^f Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL STRESS; DOMAIN DYNAMICS; EPITAXIAL INTERFACES; EPITAXIALLY GROWN; METALLIC DOMAINS; METALLIC PHASIS; R PHASE; SPATIALLY INHOMOGENEOUS PHASE; STRESS-INDUCED; STRUCTURAL PHASE TRANSITION; SURFACE STRESS;

ATMOSPHERIC PRESSURE; INSULATION; NANOWIRES; SURFACE PROPERTIES;

EPITAXIAL GROWTH;

NANOMATERIAL; VANADIUM DERIVATIVE; VANADIUM PENTOXIDE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; MECHANICAL STRESS; PARTICLE SIZE; PHASE TRANSITION; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; PHASE TRANSITION; STRESS, MECHANICAL; SURFACE PROPERTIES; VANADIUM COMPOUNDS;

EID: 84860511297     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/20/205707     Document Type: Article

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