A finite-element approach to analyze the thermal effect of defects on silicon-based PV cells

IEEE Transactions on Industrial Electronics

Volumn 59, Issue 10, 2012, Pages 3860-3867

  Vergura, Silvano ^a   Acciani, Giuseppe ^a   Falcone, Ottavio ^a  

^a POLITECNICO DI BARI   (Italy)

Author keywords

Defects; finite element method (FEM); PV cell; silicon; thermal

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; CELLS; CYTOLOGY; DEFECTS; DEGREES OF FREEDOM (MECHANICS); PHOTOVOLTAIC CELLS; SILICON;

COMSOL MULTIPHYSICS; DEPENDENCE ANALYSIS; FINITE-ELEMENT APPROACH; MONOCRYSTALLINE; PV CELLS; SIMULATION TIME; SPECIFIC DEFECTS; THERMAL;

FINITE ELEMENT METHOD;

EID: 84860479183     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIE.2011.2163286     Document Type: Article

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