Contact modeling and analysis of InAs HEMT transistors

2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Volumn , Issue , 2011, Pages 376-379

  Park, Seung Hyun ^a   Park, Hong Hyun ^a   Salmani Jelodar, Mehdi ^a   Steiger, Sebastian ^a   Povolotsky, Michael ^a   Kubis, Tillmann ^a   Klimeck, Gerhard ^b,c  

^a PURDUE UNIVERSITY   (United States)

^b Network for Computational Nanotechnology   (United States)

^c Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; CONTACT CHARACTERISTICS; CONTACT MODELING; EFFECTIVE MASS APPROXIMATION; HIGH ELECTRON MOBILITY; HIGH-SPEED OPERATION; II-IV SEMICONDUCTORS; INAS; INTRINSIC DEVICE; LOW SUPPLY VOLTAGES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MODELING TOOL; NON-EQUILIBRIUM GREEN'S FUNCTION; NOVEL DEVICES; REAL-SPACE; THEORETICAL APPROACH;

CONTACT RESISTANCE; ELECTRON MOBILITY; INDIUM ARSENIDE; MOSFET DEVICES; NANOTECHNOLOGY; POISSON EQUATION; SILICON; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84860469718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2011.6155381     Document Type: Conference Paper

References (16)

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