Geothermal environmental exposure testing of encapsulant and device materials for harsh environment MEMS sensors

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2012, Pages 432-435

  Wodin Schwartz, S ^a   Cheng, J C ^a   Senesky, D G ^a   Hammer, J E ^b   Pisano, A P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF HAWAII   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CRITICAL POINTS; CURRENT PRODUCTION; DEVICE MATERIALS; DOWN HOLES; ENCAPSULANTS; ENVIRONMENTAL EXPOSURE; EXPOSURE TESTING; HARSH ENVIRONMENT; HARSH ENVIRONMENT SENSOR; MASS CHANGE; MEMS SENSORS; SUB-SURFACE MAPPING; WELL BORE;

ALUMINUM NITRIDE; GEOTHERMAL WELLS; MEMS; SAPPHIRE; SILICON CARBIDE;

MATERIALS TESTING;

EID: 84860445986     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2012.6170219     Document Type: Conference Paper

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