Enhanced thermoelectric power factor with impurity-induced resonant level

Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

  Liu, M ^a   Qin, X Y ^a   Liu, C S ^a   Zeng, Z ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC CALCULATIONS; BAND EDGE; DOPING CONCENTRATION; IMPURITY LEVEL; OPTIMAL PARAMETER; POWER FACTORS; RESONANT ENERGY; RESONANT LEVELS; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC POWER FACTORS; THERMOELECTRIC PROPERTIES;

MATERIALS PROPERTIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SUPERCONDUCTING MATERIALS; THERMOELECTRIC POWER;

ELECTRIC POWER FACTOR;

EID: 84860408397     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3624467     Document Type: Article

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