High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer

Sensors and Actuators, A: Physical

Volumn 179, Issue , 2012, Pages 277-282

  Li, Xin ^a,b   Liu, Qin ^b   Pang, Shixin ^b   Xu, Kaixian ^b   Tang, Hui ^b   Sun, Chensong ^a  

^a SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

^b National Sensor Engineering Research Center   (China)

Author keywords

High temperature; Piezoresistive effect; Piezoresistive pressure sensor; SOI structure

Indexed keywords

ACTIVE MATERIAL; APPLIED PRESSURE; CANTILEVER STRUCTURES; CRYSTAL DIRECTION; DOPING CONCENTRATION; HIGH TEMPERATURE; MONOCRYSTALLINE; NON-LINEARITY; PIEZORESISTIVE COEFFICIENTS; PIEZORESISTIVE DETECTION; PIEZORESISTIVE EFFECTS; PIEZORESISTIVE PRESSURE SENSORS; PRESSURE GAUGES; SENSOR CHIPS; SILICON LAYER; SILICON-ON-INSULATOR SUBSTRATES; SOI STRUCTURE; SOI WAFERS;

FINITE ELEMENT METHOD; ION IMPLANTATION; MEMS; OXYGEN; PRESSURE SENSORS; SILICON ON INSULATOR TECHNOLOGY;

SILICON WAFERS;

EID: 84860375507     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2012.03.027     Document Type: Article

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