Effect of solid-phase-epitaxy Si layers on suppression of Sb diffusion from Sb-doped n +-BaSi 2/p +-Si tunnel junction to undoped BaSi 2 overlayers

Japanese Journal of Applied Physics

Volumn 51, Issue 4 PART 2, 2012, Pages

  Du, Weijie ^a   Saito, Takanobu ^a   Ajmal Khan, Muhammad ^a   Toko, Kaoru ^a   Usami, Noritaka ^b,c   Suemasu, Takashi ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OVERLAYERS; ROCKING CURVES; SB-DOPED; SECONDARY IONS; SI LAYER; SOLID PHASE EPITAXY;

DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; GROWTH TEMPERATURE; SECONDARY ION MASS SPECTROMETRY; TUNNEL JUNCTIONS; X RAY DIFFRACTION;

SILICON;

EID: 84860370780     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.04DP01     Document Type: Article

References (27)

1. T. Nakamura, T. Suemasu, K. Takakura, F. Hasegawa, A. Wakahara, and M. Imai: Appl. Phys. Lett. 81 (2002) 1032.
2. K. Morita, Y. Inomata, and T. Suemasu: Thin Solid Films 508 (2006) 363.
3. K. Toh, T. Saito, and T. Suemasu: Jpn. J. Appl. Phys. 50 (2011) 068001.
4. K. Morita, Y. Inomata, and T. Suemasu: Jpn. J. Appl. Phys. 45 (2006) L390.
5. T. Suemasu, K. Morita, and M. Kobayashi: J. Cryst. Growth 301-302 (2007) 680.
6. D. B. Migas, V. L. Shaposhnikov, and V. E. Borisenko: Phys. Status Solidi B 244 (2007) 2611.
7. R. A. Mackee, F. J. Walker, J. R. Conner, and E. D. Specht: Appl. Phys. Lett. 59 (1991) 782.
8. R. A. Mackee, F. J. Walker, J. R. Conner, and R. Raj: Appl. Phys. Lett. 63 (1993) 2818.
9. Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa: Jpn. J. Appl. Phys. 43 (2004) 4155.
10. Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa: Jpn. J. Appl. Phys. 43 (2004) L478.
11. Y. Inomata, T. Suemasu, T. Izawa, and F. Hasegawa: Jpn. J. Appl. Phys. 43 (2004) L771.
12. Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, and T. Suemasu: Appl. Phys. Express 2 (2009) 021101.
13. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu: Appl. Phys. Express 2 (2009) 051601.
14. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu: J. Cryst. Growth 311 (2009) 3581.
15. T. Suemasu, K. Morita, M. Kobayashi, M. Saida, and M. Sasaki: Jpn. J. Appl. Phys. 45 (2006) L519.
16. T. Saito, Y. Matsumoto, M. Suzuno, M. Takeishi, R. Sasaki, N. Usami, and T. Suemasu: Appl. Phys. Express 3 (2010) 021301.
17. T. Saito, Y. Matsumoto, R. Sasaki, M. Takeishi, and T. Suemasu: Jpn. J. Appl. Phys. 49 (2010) 068001.
18. M. Kobayashi, Y. Matsumoto, Y. Ichikawa, D. Tsukada, and T. Suemasu: Appl. Phys. Express 1 (2008) 051403.
19. S. A. Barnett and J. E. Greene: Surf. Sci. 151 (1985) 67.
20. H. Jorke: Surf. Sci. 193 (1988) 569.
21. S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki, and R. Ito: Appl. Phys. Lett. 59 (1991) 2103.
22. N. Usami, S. Fukatsu, and Y. Shiraki: Appl. Phys. Lett. 63 (1993) 388.
23. S. Kono, T. Goto, Y. Ogura, and T. Abukawa: Jpn. J. Appl. Phys. 35 (1996) L1211.
24. K. Kimura, Y. Endoh, M. Mannami, H. J. Gossmann, G. H. Gilmer, and L. C. Feldman: Appl. Phys. Lett. 69 (1996) 67.
25. K. D. Hobart, D. J. Godbey, P. E. Thompson, and D. S. Simon: J. Vac. Sci. Technol. B 11 (1993) 1115.
26. Z. M. Jiang, C. W. Pei, L. S. Liao, X. F. Zhou, X. J. Zhang, X. Wang, Q. J. Jia, X. M. Jiang, Z. H. Ma, T. Smith, and I. K. Sou: Thin Solid Films 336 (1998) 236.
27. K. Nakagawa, H. Kojima, N. Sugui, S. Yamaguchi, and M. Miyao: Thin Solid Films 369 (2000) 226.