Epitaxial growth of delafossite CuFeO 2 thin films by pulse laser deposition

Physica B: Condensed Matter

Volumn 407, Issue 13, 2012, Pages 2412-2415

  Li, S Z ^a,b   Liu, J ^c   Wang, X Z ^d   Yan, B W ^a   Li, H ^a   Liu, J M ^b  

^a HUBEI POLYTECHNIC UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

^d HUBEI NORMAL UNIVERSITY   (China)

Author keywords

Delafossite; Epitaxial; Multiferroics; Pulsed laser deposition; Spin glass behavior; Thin film

Indexed keywords

BAND-ENERGY PROPERTIES; DELAFOSSITE CUFEO; DELAFOSSITES; EPITAXIAL; HIGH DENSITY; LOW TEMPERATURES; MAGNETIZATION PROPERTY; MULTIFERROICS; OXYGEN PRESSURE; P TYPE SEMICONDUCTOR; PULSE LASER DEPOSITION; SPIN-GLASS BEHAVIOR;

COPPER COMPOUNDS; EPITAXIAL GROWTH; GLASS; OXYGEN; PULSED LASER DEPOSITION; SPIN GLASS; THIN FILMS; VAPOR DEPOSITION;

DEPOSITION;

EID: 84860369362     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.03.037     Document Type: Article

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