Hot electron field emission via individually transistor-ballasted carbon nanotube arrays

ACS Nano

Volumn 6, Issue 4, 2012, Pages 3236-3242

  Li, Chi ^a,b   Zhang, Yan ^a   Cole, Matthew T ^a   Shivareddy, Sai G ^a   Barnard, Jon S ^a   Lei, Wei ^b   Wang, Baoping ^b   Pribat, Didier ^c   Amaratunga, Gehan A J ^a   Milne, William I ^a,d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b SOUTHEAST UNIVERSITY   (China)

^c Sungkyunkwan University   (South Korea)

^d Kyung Hee University   (South Korea)

Author keywords

ballasted; carbon nanotubes; field emission; hot electrons; transistor

Indexed keywords

BALLASTED; CARBON NANOTUBE ARRAY; CRYSTALLINE SI; DYNAMIC CONTROLS; ELECTRON FIELD EMISSION; ELECTRON MODELS; ELECTRON POPULATION; EMISSION CHARACTERISTICS; EMISSION CURRENT DENSITY; ENERGY DISTRIBUTIONS; FIELD ENHANCEMENT FACTOR; FIELD-EMISSION CHARACTERISTICS; LOCAL ELECTRIC FIELD; LOWER ENERGIES; METALLIC EMITTERS; SILICON-ON-INSULATOR SUBSTRATES; SOURCE-DRAIN; STABLE CONTROL; VERTICALLY ALIGNED CARBON NANOTUBE;

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; FIELD EMISSION; FIELD EMISSION DISPLAYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

HOT ELECTRONS;

EID: 84860358818     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300111t     Document Type: Article

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