Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions

Thin Solid Films

Volumn 520, Issue 14, 2012, Pages 4617-4621

  Vangelista, S ^a   Mantovan, R ^a   Cocco, S ^a   Lamperti, A ^a   Salicio, O ^a   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Fe2O3; Chemical vapor deposition; Fe; Fe3O4; Magnetic tunnel junctions; Raman spectroscopy; Tri iron dodecarbonyl; X ray diffraction

Indexed keywords

ATOMIC LAYER; BILAYER; CHEMICAL VAPOR DEPOSITION PROCESS; DEPOSITION PRESSURES; FE3O4; IN-SITU; MAGNETIC TUNNEL JUNCTION; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TRI-IRON DODECARBONYL; X RAY REFLECTIVITY;

CHEMICAL VAPOR DEPOSITION; IRON; MAGNETIC DEVICES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY DIFFRACTION;

VAPORS;

EID: 84860276952     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.128     Document Type: Conference Paper

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