Optoelectronic performance of nitrogen-doped single-walled carbon nanotube films

Journal of Nanoelectronics and Optoelectronics

Volumn 7, Issue 1, 2012, Pages 68-72

  Laiho, Patrik ^a   Susi, Toma ^a   Askela, Antti ^a   Nasibulin, Albert G ^a   Kauppinen, Esko I ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Gas Phase Floating Catalyst CVD; Nitrogen Doping; Optoelectronic Performance; SWCNT Film; Transparent Conductor

Indexed keywords

DEFECT SITES; ELECTRICAL PERFORMANCE; FLOATING CATALYST; GEOMETRIC SCALING; NITROGEN-DOPED; NITROGEN-DOPED FILMS; NITROGEN-DOPING; OPTOELECTRONIC PERFORMANCE; RESISTOR NETWORK; SINGLE-WALLED CARBON; TRANSPARENT CONDUCTORS; UNDOPED FILMS;

NANOTUBES; NITROGEN; OPACITY; SHEET RESISTANCE; SINGLE-WALLED CARBON NANOTUBES (SWCN);

SEMICONDUCTOR DOPING;

EID: 84860255208     PISSN: 1555130X     EISSN: 15551318     Source Type: Journal    
DOI: 10.1166/jno.2012.1219     Document Type: Article

References (18)

1. Z. Wu, Z. Chen, X. Du, J. M. Logan, J. Sippel, M. Nikolou, K. Kamaras, J. R. Reynolds, D. B. Tanner, A. F. Hebard, and A. G. Rinzler, Science 305, 1273 (2004).
2. A. Kaskela, A. Nasibulin, M. Timmermans, B. Aitchison, A. Papadimitratos, Y. Tian, H. Jiang, D. Brown, A. Zakhidov, and E. Kauppinen, Nano Lett. 10, 4349 (2010).
3. A. A. Green and M. C. Hersam, Nano Lett. 8, 1417 (2008).
4. P. N. Nirmalraj, P. E. Lyons, S. De, J. N. Coleman, and J. Boland, J. Nano Lett. 9, 6 (2009).
5. P. Ayala, R. Arenal, A. Loiseau, A. Rubio, and T. Pichler, Rev. Mod. Phys. 82, 43 (2010).
6. P. Ayala, R. Arenal, M. H. Rümmeli, A. Rubio, and T. Pichler, Carbon 48, 585 (2010).
7. J. Wiggins-Camacho and K. Stevenson, J. Phys. Chem. C 113, 9 (2009).
8. T. Susi, A. Kaskela, Z. Zhu, P. Ayala, R. Arenal, Y. Tian, P. Laiho, J. Mali, A. G. Nasibulin, H. Jiang, G. Lanzani, O. Stephan, K. Laasonen, T. Pichler, A. Loiseau, E. I. Kauppinen, Chem. Mater. 23, 2201 (2011).
9. A. G. Nasibulin, A. Moisala, D. Brown, H. Jiang, and E. I. Kauppinen, Chem. Phys. Lett. 402, 227 (2005).
10. T. Susi, Z. Zhu, Y. Tian, A. Nasibulin, H. Jiang, and E. Kauppinen, Journal of Nanoelectronics and Optoelectronics (2012), submitted.
11. P. E. Lyons, S. De, F. Blighe, V. Nicolosi, L. F. C. Pereira, M. S. Ferreira, and J. N. Coleman, J. Appl. Phys. 104, 044302 (2008).
12. P. J. de Pablo, M. T. Martínez, J. Colchero, Gómez-J. Herrero, W. K. Maser, A. M. Benito, E. Muñoz, and A. M. Baró, Adv. Mater. 12, 573 (2000).
13. E. S. Snow, J. P. Novak, P. M. Campbell, and D. Park, Appl. Phys. Lett. 82, 2145 (2003).
14. S. Seppälä, E. Häkkinen, M. J. Alava, V. Ermolov, and E. T. Seppälä, Europhys. Lett. 91, 47002 (2010).
15. J. Ma, S. Guan, and C.-H. Lai, Phys. Rev. B 74, 205401 (2006).
16. R. Avriller, S. Latil, F. Triozon, X. Blase, and S. Roche, Phys. Rev. B 74, 121406 (2006).
17. A. Lopez-Bezanilla, X. Blase, and S. Roche, Nano Res. 3, 288 (2010).
18. H. J. Choi, J. Ihm, S. G. Louie, and M. L. Cohen, Phys. Rev. Lett. 84, 2917 (2000).