Structural and electrical resistivity study of Mn-doped LaFe 1-xMn xO 3 (x ≤ 0.5) crystals

EPJ Applied Physics

Volumn 58, Issue 1, 2012, Pages

  Firdous, Arfat ^a   Ahmad, M M ^b  

^a Govt Degree College   (India)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; ELECTRICAL RESISTIVITY; ELECTRICAL TRANSPORT; HOPPING DISTANCES; HOPPING ENERGIES; MN CONCENTRATIONS; MN-DOPED; ORTHORHOMBIC STRUCTURES; RESISTIVITY DATA; SOLID-STATE REACTION TECHNIQUES; SPACE GROUPS; UNIT-CELL DIMENSIONS; VARIABLE RANGE HOPPING MODEL; XRD;

ELECTRIC CONDUCTIVITY; LANTHANUM ALLOYS; SOLID STATE REACTIONS; X RAY DIFFRACTION;

MANGANESE;

EID: 84860235392     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2012110331     Document Type: Article

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