Cu single damascene integration of an organic nonporous ultralow- κ fluorocarbon dielectric deposited by microwave-excited plasma-enhanced CVD

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1445-1453

  Gu, Xun ^a   Nemoto, Takenao ^b   Tomita, Yugo ^a   Teramoto, Akinobu ^a   Kuroda, Rihito ^a   Kuroki, Shin Ichiro ^a   Kawase, Kazumasa ^c   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Cu damascene; low ; microwave excited PE CVD (MWPE CVD); nonporous; postetching plasma treatment

Indexed keywords

CLEANING PROCESS; CU DAMASCENE; CU LINES; CU-INTERCONNECTS; DIELECTRIC FLUOROCARBONS; EFFECTIVE DIELECTRIC CONSTANTS; FABRICATION PROCESS; FLUOROCARBON FILMS; NITROGEN PLASMA TREATMENT; NONPOROUS; PLASMA TREATMENT; PLASMA-ENHANCED CVD; SINGLE DAMASCENE;

DEGRADATION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; PLASMA APPLICATIONS; PLASMA CVD;

COPPER;

EID: 84860232360     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2187659     Document Type: Article

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