S-passivation of the Ge gate stack using (NH4)2S

Solid State Phenomena

Volumn 187, Issue , 2012, Pages 23-26

  Sioncke, Sonja ^a   Fleischmann, Claudia ^b   Lin, Dennis ^a   Vrancken, Evi ^a   Caymax, Matty ^a   Meuris, Marc ^a   Temst, Kristiaan ^b   Vantomme, André ^b   Müller, Matthias ^c   Kolbe, Michael ^c   Beckhoff, Burkhard ^c  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

Germanium; S passivation

Indexed keywords

GERMANIUM COMPOUNDS; LOGIC GATES; MOSFET DEVICES; PASSIVATION; GERMANIUM;

GATE OXIDE DEPOSITION; GATE STACKS; GE SURFACES; HIGH MOBILITY MATERIALS; MOS-FET; NEW CHANNELS; SI PROCESS; (NH4)2S TREATMENT;

GERMANIUM; PASSIVATION;

EID: 84860197183     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.187.23     Document Type: Conference Paper

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