Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr xTi 1 - x)O 3 ferroelectric substrate

JETP Letters

Volumn 95, Issue 4, 2012, Pages 198-200

  Strikha, M V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

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EID: 84860127108     PISSN: 00213640     EISSN: 10906487     Source Type: Journal    
DOI: 10.1134/S002136401204008X     Document Type: Article

References (9)

1. M. V. Strikha, Sens. Electron. Microsyst. Technol. 3(9), 14 (2012).
2. J. Rouquette, J. Haines, V. Bornand, et al., Phys. Rev. B 70, 014108 (2004).
3. M. V. Strikha, Ukr. J. Phys. Opt. 12, 162 (2011).
4. X. Hong, J. Hoffman, A. Posadas, et al., Appl. Phys. Lett. 97, 033114 (2010).
5. Yi. Zheng, G.-X. Ni, S. Bae, et al., Eur. Phys. Lett. 93, 17002 (2011).
6. E. B. Song, B. Lian, S. M. Kim, et al., Appl. Phys. Lett. 99, 042109 (2011).
7. S. Das Sarma, Sh. Adam, E. H. Hwang, and E. Rossi, Rev. Mod. Phys. 83, 407 (2011).
8. A. Ohtomo, D. A. Muller, J. L. Grazul, and H. Y. Hwang, Lett. Nature 419, 378 (2002).
9. D. D. Fong, A. M. Kolpak, J. A. Eastman, et al., Phys. Rev. Lett. 96, 127601 (2006).