Selective-area growth of III-V nanowires and their applications

Journal of Materials Research

Volumn 26, Issue 17, 2011, Pages 2127-2141

  Tomioka, Katsuhiro ^a,b   Ikejiri, Keitaro ^a   Tanaka, Tomotaka ^a   Motohisa, Junichi ^a   Hara, Shinjiroh ^a   Hiruma, Kenji ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

III V; Nanostructure; Vapor phase epitaxy(VPE)

Indexed keywords

BROAD APPLICATION; CORE SHELL STRUCTURE; EPITAXIAL TECHNIQUES; III-V; NANO-METER-SCALE; NANOWIRES (NWS); SELECTIVE AREA GROWTH; SURROUNDING-GATE;

EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; LITHOGRAPHY; NANOSTRUCTURES; NANOWIRES; PHOTOVOLTAIC CELLS; SILICON; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 84859958106     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.103     Document Type: Review

References (97)

1. K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi, M. Koguchi, and H. Kakibayashi: Growth and optical properties of nanometer-scale GaAs and InAs whiskers. J. Appl. Phys. 77, 447 (1995).
2. Y. Huang, X. Duan, Y. Cui, L.J. Lauhon, K.H. Kim, and C.M. Lieber: Logic gates and computation from assembled nanowire building blocks. Science 294, 1313 (2001).
3. M.H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang: Room-temperature ultraviolet nanowire nanolasers. Science 292, 1897 (2001).
4. M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, and C.M. Lieber: Growth of nanowire superlattice structures for nanoscale photonics and electronics. Nature 415, 617 (2002).
5. L.J. Lauhon, M.S. Gudiksen, D. Wang, and C.M. Lieber: Epitaxial core-shell and core-multishell nanowire heterostructures. Nature 420, 57 (2002).
6. J.C. Johnson, H.-J. Choi, K.P. Knutsen, R.D. Schaller, P. Yang, and R.J. Saykally: Single gallium nitride nanowire lasers. Nat. Mater. 1, 106 (2002).
7. R.S. Wagner and W.C. Ellis: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89 (1964).
8. K. Hiruma, T. Katsuyama, K. Ogawa, M. Koguchi, H. Kakibayashi, and G.P. Morgan: Quantum size microcrystals grown using organometallic vapor phase epitaxy. Appl. Phys. Lett. 59, 431 (1991).
9. M.T. Bjork, B.J. Ohlsson, T. Sass, A.I. Persson, C. Thelander, M.H. Magnusson, K. Deppert, L.R. Wallengerg, and L. Samuelson: One-dimensional heterostructures in semiconductor nanowhiskers. Appl. Phys. Lett. 80, 1058 (2002).
10. Z.X. Yan and A.G. Milnes: Deep level transient spectroscopy of silver and gold levels in LEC grown gallium arsenide. J. Electrochem. Soc. 129, 1353 (1982).
11. A.F.i. Morral, C. Colombo, G. Abstreiter, J. Arbiol, and J.R. Morante: Nucleation mechanism of gallium-assisted molecular- beam-epitaxy growth of gallium arsenide nanowires. Appl. Phys. Lett. 92, 063112 (2008).
12. B. Mandl, J. Stangl, E. Hilner, A.A. Zakharov, K. Hilletich, A.W. Dey, L. Samuelson, G. Bauer, K. Deppert, and A. Mikkelsen: Growth mechanism of self-catalyzed group III-V nanowires. Nano Lett. 10, 4443 (2010).
13. B.D. Joyce and J.A. Baldrey: Selective epitaxial deposition of silicon. Nature 195, 485 (1962).
14. F.W. Tausch and A.G. Lapierre: A novel crystal growth phenomenon: Single crystal GaAs overgrowth onto silicon dioxide. J. Electrochem. Soc. 112, 706 (1965).
15. P. Rai-Choudhury: Epitaxial gallium arsenide from trimethyl gallium and arsine. J. Electrochem. Soc. 116, 1745 (1969).
16. S.H. Jones and K.M. Lau: Selective area growth of high quality GaAs by OMCVD using native oxide masks. J. Electrochem. Soc. 134, 3149 (1987).
17. T. Fukui and S. Ando: New GaAs quantum wires on, 111.B facets by selective MOCVD. Electron. Lett. 25, 410 (1989).
18. T. Fukui, S. Ando, Y. Tokura, and T. Toriyama: GaAs tetrahedral quantum dot structure fabricated using selective area metalorganic chemical vapor deposition. Appl. Phys. Lett. 58, 2018 (1991).
19. K. Kumakura, K. Nakakoshi, J. Motohisa, T. Fukui, andH.Hasegawa: Novel formation method of quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy. Jpn. J. Appl. Phys. 34, 4387 (1995).
20. F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui: Singleelectron AND/NAND logic circuits based on a self-organized dot network. Appl. Phys. Lett. 83, 2680 (2003).
21. Y. Miyoshi, F. Nakajima, J. Motohisa, and T. Fukui: A 1 bit binarydecision- diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor phase epitaxy. Appl. Phys. Lett. 87, 033501 (2005).
22. S. Ando, N. Kobayashi, and H. Ando: Selective area metalorganic chemical vapor deposition growth for hexagonal facet lasers. J. Cryst. Growth 145, 302 (1994).
23. T. Hamano, H. Hirayama, and Y. Aoyagi: New technique for fabrication of two-dimensional photonic bandgap crystals by selective epitaxy. Jpn. J. Appl. Phys. 36, L286 (1997).
24. J. Motohisa, J. Noborisaka, J. Takeda, M. Inari, and T. Fukui: Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates. J. Cryst. Growth 272, 180 (2004).
25. J. Noborisaka, J. Motohisa, and T. Fukui: Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy. Appl. Phys. Lett. 86, 213102 (2005).
26. K. Ikejiri, J. Noborisaka, S. Hara, J. Motohisa, and T. Fukui: Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE. J. Cryst. Growth 298, 616 (2007).
27. K. Ikejiri, T. Sato, H. Yoshida, K. Hiruma, J. Motohisa, S. Hara, and T. Fukui: Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy. Nanotechnology 19, 265604 (2008).
28. P. Mohan, J. Motohisa, and T. Fukui: Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays. Nanotechnology 16, 2903 (2005).
29. Y. Kitauchi, Y. Kobayashi, K. Tomioka, S. Hara, K. Hiruma, T. Fukui, and J. Motohisa: Structural transition in indium phosphide nanowires. Nano Lett. 10, 1699 (2010).
30. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, and T. Fukui: Growth of highly uniform InAs nanowire arrays by selective-area MOVPE. J. Cryst. Growth 298, 644 (2007).
31. M. Akabori, K. Sladek, H. Hardtdegen, Th. Schäoers, and D. Grutzmacher: Influence of growth temperature on the selective area MOVPE of InAs nanowries on GaAs(111)B using N2 carrier gas. J. Cryst. Growth 311, 3813 (2009).
32. M. Akabori, J. Takeda, J. Motohisa, and T. Fukui: InGaAs nanopillar array formation on partially masked InP(111)B by selective area metal-organic vapour phase epitaxial growth for twodimensional photonic crystal application. Nanotechnology 14, 1071 (2003).
33. T. Sato, J. Motohisa, J. Noborisaka, S. Hara, and T. Fukui: Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy. J. Cryst. Growth 310, 2359 (2008).
34. T. Sato, Y. Kobayashi, J. Motohisa, S. Hara, and T. Fukui: SAMOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement. J. Cryst. Growth 310, 5111 (2008).
35. M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa, and T. Fukui: Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy. Jpn. J. Appl. Phys. 49, 04DH08 (2010).
36. S. Fujisawa, T. Sato, S. Hara, J. Motohisa, K. Hiruma, and T. Fukui: Growth and characterization of a GaAs quantum well buried in GaAsP/GaAs vertical heterostructure nanowires by selective-area metal organic vapor phase epitaxy. Jpn. J. Appl. Phys. 50, 04DH03 (2011).
37. H. Sekiguchi, K. Kishino, and A. Kikuchi: Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Appl. Phys. Lett. 96, 231104 (2010).
38. Y.-J. Kim, C.-H. Lee, Y.J. Hong, G.-C. Yi, S.S. Kim, and H. Cheong: Controlled selective growth of ZnO nanorod and microrod arrays on Si substrate by a wet chemical method. Appl. Phys. Lett. 89, 163128 (2006).
39. J. Noborisaka, J. Motohisa, S. Hara, and T. Fukui: Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy. Appl. Phys. Lett. 87, 093109 (2005).
40. P. Mohan, J. Motohisa, and T. Fukui: Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires. Appl. Phys. Lett. 88, 013110 (2006).
41. B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui: Single GaAs/GaAsP coaxial core-shell nanowire laser. Nano Lett. 9, 112 (2009).
42. P. Mohan, J. Motohisa, and T. Fukui: Fabrication of InP/InAs/ InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy. Appl. Phys. Lett. 88, 133105 (2006).
43. L. Yang, J. Motohisa, J. Takeda, K. Tomioka, and T. Fukui: Selective-area growth of hexagonal nanopillars with single InGaAs/ GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence. Nanotechnology 18, 105302 (2007).
44. J.N. Shapiro, A. Lin, P.S. Wong, A.C. Scofield, C. Tu, P.N. Senanayake, G. Mariani, B.L. Liang, and D.L. Huffaker: InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy. Appl. Phys. Lett. 97, 243102 (2010).
45. H. Sasakura, K. Humano, I. Suemune, J. Motohisa, Y. Kobayashi, M. van Kouwen, K. Tomioka, T. Fukui, N. Akopian, and V. Zwiller: Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy. J. Phys. Conf. Ser. 193, 012132 (2009).
46. A. Hayashida, T. Sato, S. Hara, J. Motohisa, K. Hiruma, and T. Fukui: Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires. J. Cryst. Growth 312, 3592 (2010).
47. W.S. Shi, Y.F. Zheng, N. Wang, C.S. Lee, and S.T. Lee: Oxideassisted growth and optical characterization of gallium-arsenide nanowires. Appl. Phys. Lett. 78, 3304 (2001).
48. R.L. Dobrusin, R. Kotechy, and S. Shlosman: Wulff Construction: A Global Shape from Local Interactions. (American Mathematical Society, Providence, 1993).
49. C.H. Li, Y. Sun, D.C. Law, S.B. Visbeck, and R.F. Hicks: Reconstructions of the InP(111)A surface. Phys. Rev. B 68, 085320 (2003).
50. D.K. Biegelsen, R.D. Bringans, J.E. Northrup, and L.-E. Swartz: Reconstructions of GaAs(-1-1-1) surfaces observed by scanning tunneling microscopy. Phys. Rev. Lett. 65, 452 (1990).
51. K. Tomioka, J. Motohisa, S. Hara, and T. Fukui: Control of InAs nanowire growth directions on Si. Nano Lett. 8, 3475 (2008).
52. K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara, and T. Fukui: Selective-area growth of vertically aligned GaAs and GaAs/ AlGaAs core-shell nanowires on Si(111) substrate. Nanotechnology 20, 145302 (2009).
53. K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui: III-V nanowires on Si substrate: Selective-area growth and device applications. IEEE J. Select. Top. Quantum Elec. Early access (2011).
54. S. Hertenberger, D. Rudolph, M. Bichler, J.J. Findley, G. Abstreiter, and G. Koblmuller: Growth kinetics in positioncontrolled and catalyst-free InAs nanowrie arrays on Si(111) grown by selective area molecular beam epitaxy. J. Appl. Phys. 108, 114316 (2010).
55. K. Sladek, V. Klinger, J. Wensorra, M. Akabori, H. Hardtdegen, and D. Grutzmacher: MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires. J. Cryst. Growth 312, 65 (2010).
56. B.J. Skromme, C.J. Sandroff, E. Yablonovitch, and T. Gmitter: Effects of passivation ionic films on the photoluminesnce properties of GaAs. Appl. Phys. Lett. 51, 2022 (1987).
57. M.T. Borgstrom, V. Zwiller, E. Muller, and A. Imamoglu: Optically bright quantum dots in single nanowire. Nano Lett. 5, 1439 (2005).
58. S.N. Dorenbos,H. Sasakura, M.P. vanKouwen, N. Akopian, S. Adachi, N.Namekata,M. Jo, J.Motohisa, Y.Kobayashi, K.Tomioka, T. Fukui, S. Inoue, H. Kumano, C.M. Natarajan, R.H. Hadfield, T. Zijlstra, T.M. Klapwijk, and I. Suemune: Position controlled nanowires for infrared single photon emission. Appl. Phys. Lett. 97, 171106 (2010).
59. H. Goto, K. Nosaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, and T. Fukui: Growth of core-shell InP nanowires for photovoltaic application by selective-area metal organic vapor phase epitaxy. Appl. Phys. Exp. 2, 035004 (2009).
60. A. Kikuchi, M. Kawai, M. Tada, and K. Kishino: InGaN/GaN multiple quantum disks nanocolumn light-emitting diodes grown on (111) Si substrate. Jpn. J. Appl. Phys. 43, L1524 (2004).
61. F. Qian, S. Gradecak, Y. Li, C.-Y. Wen, and C.M. Lieber: Core/ multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes. Nano Lett. 5, 2287 (2005).
62. K. Tomioka, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui: GaAs/ AlGaAs core multishell nanowire-based light-emitting diodes on Si. Nano Lett. 10, 1639 (2010).
63. C.P.T. Svensson, T. Martensson, J. Tragardh, C. Larsson, M. Rask, D. Hessman, L. Samuelson, and J. Ohlsson: Monolithic GaAs/ InGaP nanowire light emitting diodes on silicon. Nanotechology 19, 305201 (2008).
64. L.C. Chuang, F.G. Sedgwick, R. Chen, W.S. Ko, M. Moewe, K.W. Ng, T.T. Tran, and C. C-Hasnain: GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate. Nano Lett. 11, 385 (2011).
65. S.J. An, J.H. Chae, G.-C. Yi, and G.H. Park: Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays. Appl. Phys. Lett. 92, 121108 (2008).
66. C.-H. Lee, J. Yoo, Y.J. Hong, J. Cho, Y.-J. Kim, S.-R. Jeon, J.H. Baek, and G.-C. Yi: GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays. Appl. Phys. Lett. 94, 213101 (2009).
67. E. Lai, W. Kim, and P. Yang: Vertical nanowire array-based light emitting diodes. Nano Res. 1, 123 (2008).
68. H.-W. Lin, Y.-J. Lu, H.-Y. Chen, H.-M. Lee, and S. Gwo: InGaN/ GaN nanorod array white light-emitting diode. Appl. Phys. Lett. 97, 073101 (2010).
69. E.F. Schubert: Light-Emitting Diodes, 2nd ed (Cambridge University Press, Cambridge, 2006).
70. S.K. Ray, M. Groom, H.Y. Liu, M. Hopkinson, and R.A. Hogg: Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells. Jpn. J. Appl. Phys. 45, 2542 (2006).
71. L. Hu and G. Chen: Analysis of optical absorption in silicon nanowire arrays for photovoltaic applications. Nano Lett. 7, 3249 (2007).
72. B.M. Kayes, H.A. Atwater, and N.S. Lewis: Comparison of the device physics principles of planar and radial p-n junction nanorod solar cell. J. Appl. Phys. 97, 114302 (2005).
73. A. Kandala, T. Betti, and A.F.I. Morral: General theoretical considerations on nanowire solar cell designs. Phys. Status Solidi A 206, 173 (2009).
74. B. Tian, X. Zheng, T.J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang, and C.M. Lieber: Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature 449, 885 (2007).
75. T.J. Kempa, B. Tian, D.R. Kim, J. Hu, X. Zheng, and C.M. Lieber: Single and tandem axial p-i-n nanowire photovoltaic devices. Nano Lett. 8, 3456 (2008).
76. M.D. Keizenberg, D.B. Turner-Evans, B.M. Kayes, M.A. Filler, M.C. Putnam, N.S. Lewis, and H.A. Atwater: Photovoltaic measurements in single-nanowire silicon solar cells. Nano Lett. 8, 710 (2008).
77. C. Colombo, M. Heiß, M. Grätzel, and A.F.I. Morral: Gallium arsenide p-i-n radial structures for photovoltaic applications. Appl. Phys. Lett. 94, 173108 (2009).
78. W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang: Direct heteroepitaxy of vertical InAs nanowires on Si substrate for broad band photovoltaics and photodetection. Nano Lett. 9, 2926 (2009).
79. G. Mariani, R.B. Laghumavarapu, B.T. de Villers, J. Shapiro, P. Senanayake, A. Lin, B.J. Schwartz, and D.L. Huffaker: Hybrid conjugated polymer solar cells using patterned GaAs nanopillars. Appl. Phys. Lett. 97, 013107 (2010).
80. M. Sugo, A. Yamamoto, M. Yamaguchi, and C. Uemura: Highefficiency InP solar cells with n+-p-p+ structure grown by metalorganic chemical vapor deposition. Jpn. J. Appl. Phys. 24, 1243 (1985).
81. J. Xiang, Y. Hu, Y. Wu, H. Yan, and C.M. Lieber: Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441, 489 (2006).
82. L. Zhang, R. Tu, and H. Dai: Parallel core-shell metal- dielectricsemiconductor germanium nanowires for high-current surroundgate field-effect transistors. Nano Lett. 6, 2785 (2006).
83. J. Noborisaka, T. Sato, J.Motohisa, S.Hara, K. Tomioka, and T. Fukui: Electrical characterizations of InGaAs nanowire-top-gate field-effect transistors by selective-area metal organic vapor phase epitaxy. Jpn. J. Appl. Phys. 46, 7562 (2007).
84. X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li, and C.M. Lieber: InAs/ InP radial nanowire heterostructures as high electron mobility devices. Nano Lett. 7, 3214 (2007).
85. Q.-T. Do, K. Blekker, I. Regolin, W. Prost, and F.J. Tegude: High transconductance MISFET with a single InAs nanowire channel. IEEE Elec. Dev. Lett. 28, 682 (2007).
86. D. Yeom, K. Keem, J. Kang, D-Y. Jeong, C. Yoon, D. Kim, and S. Kim: NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers. Nanotechnology 19, 265502 (2008).
87. H.T. Ng, J. Han, T. Yamada, P. Nguyen, Y.P. Chen, and M. Meyyappan: Single crystal nanowire vertical surround-gate field-effect transistor. Nano Lett. 4, 1247 (2004).
88. V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, and U. Gosele: Realization of a silicon nanowire vertical surround-gate field-effect transistor. Small 2, 85 (2006).
89. C. Rehnstedt, T. Martensson, C. Thelander, L. Samuelson, and L.-E. Wernersson: Vertical InAs nanowire wrap gate transistors on Si substrate. IEEE Trans. Electron. Devices 55, 3037 (2008).
90. M.T. Bjork, O. Hayden, H. Schmid, H. Riel, and W. Riess: Vertical surround-gate silicon nanowire impact ionization field-effect transistors. Appl. Phys. Lett. 90, 142110 (2007).
91. T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, E. Sano, and T. Fukui: Vertical surrounding gate transistors using single InAs nanowires grown on Si substrate. Appl. Phys. Exp. 3, 025003 (2010).
92. M. Radosavljevic, G. Dewey, J.M. Fanstenau, J. Kavalieros, R. Kotlayer, B. Chu-Kung, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, and R. Chau: Non-planar, multi-gate InGaAs Quantum well field effect transistors with high-K gate dielectric and ultra-scaled gateto- drain/gate-to-source separation for low power logic application. Abstract in 2010 Int. Elec. Dev. Meeting (IEDM) p. 6.1.1 (2010).
93. M.T. Bjork, J. Knoch, H. Schmid, H. Riel, and W. Riess: Silicon nanowire tunneling field-effect transistors. Appl. Phys. Lett. 92, 193504 (2008).
94. S.H. Kwon, J.H. Kang, C. Seassal, S.K. Kim, P. Regreny, Y.H. Lee, C.M. Lieber, and H.G. Park: Subwavelength plasmonic lasing from a semiconductor nanodisk with silver nanopan cavity. Nano Lett. 10, 3679 (2010).
95. H. Im, N.C. Lindquist, A. Lesuffleur, and S.H. Oh: Atomic layer deposition of dielectric overlayers for enhancing the optical properties and chemical stability of plasmonic nanoholes. ACS Nano. 4, 947 (2010).
96. M.T.Bjork,H. Schmid, C.D. Bessire, K. E. MoselundmH. Ghoneim, S. Karg, E. Lortscher, and H. Riel: Si-InAs heterojunction Esaki tunnel diodes with high current densities. Appl. Phys. Lett. 97, 163501 (2010).
97. K. Tomioka and T. Fukui: Tunnel field-effect transistor using InAs nanowire/Si heterojunction. Appl. Phys. Lett. 98, 083114 (2011).