Application of VUV irradiation to promote the wet etch resistance of PSZ-SOG film inside the gap

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 1927-1931

  Chen, Chia Ming ^a   Yeh, Ming Hsin ^a   Chien, Hung Ju ^a   Fan, Jhen Jhih ^a   Yan, Chin Rung ^a   Matsuo, Hiroshi ^a  

^a POWERCHIP TECHNOLOGY CORPORATION   (Taiwan)

Author keywords

Densification; Polysilazane; Shallow trench isolation; Spin on glass; VUV irradiation

Indexed keywords

ASPECT RATIO; BUDGET CONTROL; CURING; DENSIFICATION; DIELECTRIC MATERIALS; GLASS; PHOTONS; RADIATION; SEMICONDUCTING SILICON; SPIN GLASS; WET ETCHING;

CONVERSION RATES; CURING PROCESS; POLYSILAZANE; REACTION MECHANISM; SHALLOW TRENCH ISOLATION; SPIN ON GLASS; VACUUM ULTRAVIOLETS; VUV IRRADIATION;

IRRADIATION;

EID: 84859902201     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.120     Document Type: Article

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