Effect of ZnO doping on microstructural and electrical properties of SnO 2-Ta 2O 5 based varistors

Journal of Alloys and Compounds

Volumn 528, Issue , 2012, Pages 79-83

  He, Jianfeng ^a   Peng, Zhijian ^a   Fu, Zhiqiang ^a   Wang, Chengbiao ^a   Fu, Xiuli ^b  

^a CHINA UNIVERSITY OF GEOSCIENCES   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Doping; Electrical properties; SnO 2 varistor; ZnO

Indexed keywords

CERAMIC PROCESSING; CERAMIC VARISTOR; DETECTION LIMITS; DOPED ZNO; DOPING EFFECTS; EDX ANALYSIS; MICRO-STRUCTURAL; MICROSTRUCTURE OBSERVATION; NONLINEAR EXPONENT; VARISTOR CERAMICS; VARISTOR VOLTAGE; ZN IONS; ZNO; ZNO DOPING;

CERAMIC MATERIALS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; SINTERING; TANTALUM OXIDES; X RAY DIFFRACTION; ZINC OXIDE;

VARISTORS;

EID: 84859882410     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.02.172     Document Type: Article

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