Heavy-Ion-Induced, gate-rupturein power mosfets

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1786-1791

  Fischer, Thomas A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84859869325     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337555     Document Type: Article

References (3)

1. A.E. Waskiewicz, J.W. Groninger, V.H. Strahan, and D.M. Long, “Burnout of Power MOS Transistors with Heavy Ions of 252 Cf,” IEEE Trans. Nucl. Sci., NS-33, No. 6, Dec. 1986, pp. 1710 – 1713.
2. T.F. Wrobel, F.N. Coppage, G.L. Hash, A. Smith, “Current Induced Avalanche in Epitaxial Structures,” IEEE Trans. Nucl. Sci., NS-32, No. 6, Dec. 1985, pp. 3991 – 3995.
3. T.F. Wrobel, On Ion Induced Hard Errors in Dielectric Structures, Ph.D. Dissertation, University of New Mexico, July 1987. A summary of this work, having the same title, is located elsewhere in this volume.